RU7080R MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: RU7080R
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 111 W
Предельно допустимое напряжение сток-исток |Uds|: 70 V
Предельно допустимое напряжение затвор-исток |Ugs|: 25 V
Пороговое напряжение включения |Ugs(th)|: 4 V
Максимально допустимый постоянный ток стока |Id|: 80 A
Максимальная температура канала (Tj): 175 °C
Общий заряд затвора (Qg): 50 nC
Время нарастания (tr): 94 ns
Выходная емкость (Cd): 388 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.009 Ohm
Тип корпуса: TO220
RU7080R Datasheet (PDF)
ru7080r.pdf
RU7080RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/80A,RDS (ON) =7m (Typ.) @ VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche testedTO-220 175C Operating Temperature Lead Free,RoHS compliantApplications Switching Application SystemsN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitC
ru7080l.pdf
RU7080LN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =5.7m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche tested Lead Free and Green Devices Available (RoHS Compliant)GSTO252DApplications Power SupplyGSN-Channel MOSFETAbsolute Maximum RatingsSymbol Parameter Rating UnitC
ru7080s.pdf
RU7080SN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,D RDS (ON) =7m(Typ.)@VGS=10V Ultra Low On-Resistance Fast Switching 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)GSTO263DApplications Motor Drives Uninterruptible Power SuppliesG DC/DC converter
ru7088a.pdf
RU7088AN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 65V/88A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications The device is suitable for use inPWM ,load switching and generalpurpose applications.N-Channel
ru7088r.pdf
RU7088RN-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A, RDS (ON) =6.5m(Typ.)@VGS=10V Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche Rated 100% avalanche tested 175C Operating Temperature Lead Free and Green Devices Available (RoHS Compliant)TO220Applications Switching Application Syste
ru7088r3.pdf
RU7088R3N-Channel Advanced Power MOSFETFeatures Pin Description 70V/80A,Insulation Slug RDS (ON) =6.5m(Typ.)@VGS=10V Insulation Slug(VISO1500VAC) Ultra Low On-Resistance Exceptional dv/dt capability Fast Switching and Fully Avalanche RatedF t S it hi d F ll A l h R t d 100% avalanche tested 175C Operating TemperatureS Lead Free and Gre
ru7085r.pdf
RU7085RN-Channel Advanced Power MOSFETMOSFETFeatures Pin Description 70V/85A,RDS (ON) =6m(Typ.)@VGS=10V Super High Dense Cell Design Ultra Low On-Resistance 100% avalanche testedTO-220 Lead Free and Green Devices Available(RoHS Compliant)Applications Power SupplyN-Channel MOSFETAbsolute Maximum RatingsSymbolParameter Rating UnitCommon Rati
ru7088r.pdf
RU7088Rwww.VBsemi.twN-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY 175 C Junction TemperatureVDS (V) RDS(on) ()ID (A)a TrenchFET Power MOSFET0.005 at VGS = 10 V 120 Material categorization:600.008 at VGS = 7.5 V100TO-220ABDGSN-Channel MOSFETG D SABSOLUTE MAXIMUM RATINGS (TC = 25 C, unless otherwise noted)Parameter Symbol Limit Uni
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