RUH3051M2 - описание и поиск аналогов

RUH3051M2 N-Channel Advanced Power MOSFET Features Pin Description 30V/50A, RDS (ON) =4.2m (Typ.)@VGS=10V D D D D RDS (ON) =6m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN3333 D Applications DC/DC Converters On board power for

RUH3051M N-Channel Advanced Power MOSFET Features Pin Description 30V/50A, RDS (ON) =5m (Typ.)@VGS=10V D RDS (ON) =7.5m (Typ.)@VGS=4.5V DD D Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G S Lead Free and Green Devices Available (RoHS Compliant) S S PIN1 DFN5060 D Applications DC/DC Converters On board power for server

RUH30150M N-Channel Advanced Power MOSFET Features Pin Description 30V/150A, RDS (ON) =0.9m (Typ.)@VGS=10V D D D D RDS (ON) =1.4m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board power

RUH30J105M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Com

RUH30J85M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =3.5m (Typ.)@VGS=10V RDS (ON) =5m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Complia

RUH30J95M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/30A RDS (ON) =6m (Typ.)@VGS=10V RDS (ON) =9m (Typ.)@VGS=4.5V Die 2 30V/90A RDS (ON) =2.8m (Typ.)@VGS=10V RDS (ON) =4.2m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS Compl

RUH30120M-C N-Channel Advanced Power MOSFET Features Pin Description 30V/120A, RDS (ON) =1.6m (Typ.)@VGS=10V D D D D RDS (ON) =2.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed 100% avalanche tested G Lead Free and Green Devices Available (RoHS Compliant) S S S PIN1 PIN1 PDFN5060 D Applications DC/DC Converters On board powe

RUH3025M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/25A, D RDS (ON) =10m (Typ.)@VGS=10V D D RDS (ON) =16m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S S ESD protected 100% Avalanche Tested PIN1 Lead Free and Green Devices (RoHS Compliant) D

RUH3090M N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, D D RDS (ON) =2.6m (Typ.)@VGS=10V D D RDS (ON) =3.6m (Typ.)@VGS=4.5V Using Ruichips Advanced SGTTM Technology G Ultra Low On-Resistance S S 100% Avalanche Tested S Reliable and Rugged Qualified According to JEDEC Criteria PIN1 Lead Free and Green Devices (RoHS Compliant

RUH3030M3 N-Channel Advanced Power MOSFET Features Pin Description 30V/30A, RDS (ON) =5m (Typ.)@VGS=10V D D RDS (ON) =8.5m (Typ.)@VGS=4.5V D D Ultra Low On-Resistance Uses Ruichips advanced RUISGTTM technology 100% avalanche tested SG Lead Free and Green Devices Available (RoHS Compliant) S S PIN1 PIN1 DFN3030 D Applications DC/DC Converters

RUH30J120M Dual Asymmetric N-Channel MOSFET Features Pin Description Die 1 30V/50A RDS (ON) =3.8m (Typ.)@VGS=10V RDS (ON) =5.5m (Typ.)@VGS=4.5V Die 2 30V/120A RDS (ON) =2.2m (Typ.)@VGS=10V RDS (ON) =3.0m (Typ.)@VGS=4.5V Ultra Low On-Resistance Uses Ruichips advanced SGT technology 100% avalanche tested PIN1 Lead Free and Green Devices Available (RoHS

RUH30J51M Dual Symmetric N-Channel MOSFET Features Pin Description 30V/50A, S2 S2 RDS (ON) =5m (Typ.)@VGS=10V S2 G2 RDS (ON) =8m (Typ.)@VGS=4.5V Ultra Low On-Resistance Fast Switching Speed D1 D1 D1 100% avalanche tested 100% avalanche tested D1 Lead Free and Green Devices Available (RoHS Compliant) G1 PIN1 DFN5*6 Applications pp DC/DC Co

RUH3090M3-C N-Channel Advanced Power MOSFET Features Pin Description 30V/90A, RDS (ON) =2.7m (Typ.)@VGS=10V D D D RDS (ON) =4m (Typ.)@VGS=4.5V D Uses Ruichips Advanced RUISGTTM Technology Low Gate Charge Minimizing Switching Loss G Ultra Low On-Resistance S S Excellent QgxRDS(on) product(FOM) S 100% Avalanche Tested PIN1 Lead Free and Green Devi