PDC3906Z MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: PDC3906Z
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 45 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 60 A
Tjⓘ - Максимальная температура канала: 150 °C
trⓘ - Время нарастания: 14.5 ns
Cossⓘ - Выходная емкость: 190 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
Тип корпуса: PPAK3X3
PDC3906Z Datasheet (PDF)
pdc3906z.pdf
30V N-Channel MOSFETs PDC3906Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 6m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =6m@VGS = 10V performance, and withstand high energy
pdc3908x.pdf
30V N-Channel MOSFETs PDC3908X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,60A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene
pdc3904z.pdf
30V N-Channel MOSFETs PDC3904Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 3.8m 80A advanced technology has been especially tailored to minimize on-state resistance, provide superior switching Features 30V,80A, RDS(ON) =3.8m@VGS = 10V performance, and withstand high energ
pdc3903z.pdf
30V P-Channel MOSFETs PDC3903Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -50A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-50A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig
pdc3905z.pdf
30V P-Channel MOSFETs PDC3905Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 15m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high
pdc3902x.pdf
30V N-Channel MOSFETs PDC3902X General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 1.6m 130A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V, 130A, RDS(ON) =1.6m@VGS = 10V performance, and withstand high
pdc3907z.pdf
30V P-Channel MOSFETs PDC3907Z General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 18m -30A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-30A, RDS(ON) =18m@VGS = -10V performance, and withstand high
pdc3908z.pdf
30V N-Channel MOSFETs PDC3908Z General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 8.5m 48A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,48A, RDS(ON) =8.5m@VGS = 10V performance, and withstand high ene
pdc3903x.pdf
30V P-Channel MOSFETs PDC3903X General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 8.5m -60A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-60A, RDS(ON) =8.5m@VGS = -10V performance, and withstand hig
Другие MOSFET... WPB4002 , FDM15-06KC5 , FQD2N60CTM , FDM47-06KC5 , FDPF045N10A , FMD15-06KC5 , FDMS8672S , FMD21-05QC , IRLB4132 , FDMS86368F085 , FMD47-06KC5 , FDBL86361F085 , FMK75-01F , FMM110-015X2F , FMM150-0075X2F , FMM22-05PF , FMM22-06PF .
Список транзисторов
Обновления
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