PDN2312S datasheet, аналоги, основные параметры

Наименование производителя: PDN2312S  📄📄 

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.56 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 10 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.7 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 14.4 ns

Cossⓘ - Выходная емкость: 70 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.019 Ohm

Тип корпуса: SOT23-3S

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Аналог (замена) для PDN2312S

- подборⓘ MOSFET транзистора по параметрам

 

PDN2312S даташит

 ..1. Size:395K  potens
 pdn2312s.pdf pdf_icon

PDN2312S

20V N-Channel MOSFETs PDN2312S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 19m 6.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 6.7A, RDS(ON)=19m @VGS=4.5V performance, and withstand high ener

 8.1. Size:465K  potens
 pdn2318s.pdf pdf_icon

PDN2312S

20V N-Channel MOSFETs PDN2318S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 20V 65m 4A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 20V, 4A, RDS(ON) =65m @VGS = 4.5V performance, and withstand high energ

 8.2. Size:499K  potens
 pdn2313s.pdf pdf_icon

PDN2312S

20V P-Channel MOSFETs PDN2313S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 65m -4.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.1A, RDS(ON) =65m @VGS = -4.5V performance, and withstand hi

 8.3. Size:498K  potens
 pdn2311s.pdf pdf_icon

PDN2312S

20V P-Channel MOSFETs PDN2311S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -20V 50m -4.7A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -20V,-4.7A, RDS(ON)=50m @VGS=-4.5V performance, and withstand high

ПОКАЗАТЬ ЕЩЁ

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