PDN3912S - аналоги и даташиты транзистора

 

PDN3912S - Даташиты. Аналоги. Основные параметры


   Наименование производителя: PDN3912S
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 1.56 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 6.5 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 7.2 ns
   Cossⓘ - Выходная емкость: 55 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.024 Ohm
   Тип корпуса: SOT23-3S

 Аналог (замена) для PDN3912S

 

PDN3912S Datasheet (PDF)

 ..1. Size:689K  potens
 pdn3912s.pdf pdf_icon

PDN3912S

PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high

 8.1. Size:677K  potens
 pdn3914s.pdf pdf_icon

PDN3912S

30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en

 8.2. Size:806K  potens
 pdn3916s.pdf pdf_icon

PDN3912S

30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m @VGS=10V performance, and withstand high e

 9.1. Size:940K  potens
 pdn3909s.pdf pdf_icon

PDN3912S

30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m @VGS = -10V performance, and withstand hig

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... PDN2309S , PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S , IRF830 , PDN3914S , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 .

 

 
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