PDN3914S - Даташиты. Аналоги. Основные параметры
Наименование производителя: PDN3914S
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 1.56 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 5.5 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 8.8 ns
Cossⓘ - Выходная емкость: 57 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.025 Ohm
Тип корпуса: SOT23-3S
Аналог (замена) для PDN3914S
PDN3914S Datasheet (PDF)
pdn3914s.pdf

30V N-Channel MOSFETs PDN3914S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 25m 5.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.5A, RDS(ON) =25m @VGS = 10V performance, and withstand high en
pdn3912s.pdf

PDN3912S 30V N-Channel MOSFETs General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 24m 6.5A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,6.5A, RDS(ON) =24m @VGS = 10V performance, and withstand high
pdn3916s.pdf

30V N-Channel MOSFETs PDN3916S General Description BVDSS RDSON ID These N-Channel enhancement mode power field effect transistors are using trench DMOS technology. This 30V 35m 5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching 30V,5.1A , RDS(ON)=35m@VGS=10V performance, and withstand high e
pdn3909s.pdf

30V P-Channel MOSFETs PDN3909S General Description BVDSS RDSON ID These P-Channel enhancement mode power field effect transistors are using trench DMOS technology. This -30V 32m -5.1A advanced technology has been especially tailored to Features minimize on-state resistance, provide superior switching -30V,-5.1A, RDS(ON) =32m@VGS = -10V performance, and withstand hig
Другие MOSFET... PDN2311S , PDN2312S , PDN2313S , PDN2318S , PDN3611S , PDN3612S , PDN3909S , PDN3912S , 60N06 , PDN3916S , PDN4911S , PDN6911S , PDP0959 , PDP0980 , PDP3960 , PDQ3714 , PDS3712 .
History: STP60N55F3 | CS6N70A3H | KX90N06 | PDN2313S | 2SK1233 | STP5NK65ZFP | 2SK1239
History: STP60N55F3 | CS6N70A3H | KX90N06 | PDN2313S | 2SK1233 | STP5NK65ZFP | 2SK1239



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