SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 Application:LED, PC Power, Char

SW12N70D N-channel Enhanced mode TO-220F/TO-262/TO-220SF/TO-220FT MOSFET TO-220FT TO-220SF Features TO-220F TO-262 BVDSS : 700V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) : 0.75 Low Gate Charge (Typ 47nC) Improved dv/dt Capability 2 1 1 1 100% Avalanche Tested 1 2 2 2 2 3 3 3 3 Application:LED, PC Power,

SW12N65DA N-channel Enhanced mode TO-220SF MOSFET TO-220SF Features BVDSS : 650V ID : 12A High ruggedness Low RDS(ON) (Typ 0.75)@VGS=10V RDS(ON) :0.75 Low Gate Charge (Typ 43nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 2 3 Application:LED, Charger, PC Power 1 1. Gate 2. Drain 3. Source 3 General Description Th

SW12N65D N-channel Enhanced mode TO-220SF/TO-220FT MOSFET TO-220SF TO-220FT BVDSS : 650V Features ID : 12A High ruggedness RDS(ON) : 0.66 Low RDS(ON) (Typ 0.66)@VGS=10V Low Gate Charge (Typ 41nC) 2 Improved dv/dt Capability 1 1 100% Avalanche Tested 2 1 2 3 3 Application: LED , Charger, PC Power 1. Gate 2. Drain 3. Source

SW15N50D N-channel Enhanced mode TO-220SF MOSFET TO-220SF BVDSS : 500V Features ID : 15A High ruggedness RDS(ON) : 0.22 Low RDS(ON) (Typ 0.22)@VGS=10V Low Gate Charge (Typ 92nC) 2 Improved dv/dt Capability 1 100% Avalanche Tested 2 1 3 Application: LED , Charger, Adaptor 1. Gate 2. Drain 3. Source 3 General Description This

SW10N65DN-channel Enhanced mode TO-220F/TO-220SF/TO-220FT/TO-220/TO-262/TO-262N MOSFETFeaturesTO-262 TO-262NTO-220F TO-220SF TO-220FT TO-220BVDSS : 650V High ruggednessID : 10A Low RDS(ON) (Typ 0.9)@VGS=10V Low Gate Charge (Typ 35nC)RDS(ON) : 0.9 Improved dv/dt Capability 100% Avalanche Tested2 Application: UPS,Inverter, 1 112 2 1 1 1

SW15N65JN-channel Enhanced mode TO-220SF/TO-252 MOSFETFeaturesTO-220SF TO-252BVDSS : 650V High ruggednessID : 15A Low RDS(ON) (Typ 0.22)@VGS=10VRDS(ON) : 0.22 Low Gate Charge (Typ 29nC) Improved dv/dt Capability 2 100% Avalanche Tested 1122 Application:LED , Charger, PC Power 3311. Gate 2. Drain 3. SourceGeneral DescriptionThis p

SW10N65K N-channel Enhanced mode TO-220/TO-220F/TO-251N /TO-252/ TO-262/TO-220SF MOSFET Features TO-220F TO-251N TO-262 TO-220 TO-252 TO-220SF BVDSS : 650V High ruggedness ID : 10A Low RDS(ON) (Typ 0.36)@VGS=10V RDS(ON) :0.36 Low Gate Charge (Typ29nC) Improved dv/dt Capability 100% Avalanche Tested 2 1 2 1 2 1 2 1 2 1 2 1 2 Applicatio