SWN4N65D - аналоги, параметры транзистора - Справочник транзисторов

SWN4N65D даташит

..1. Size:1049K samwin
swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf pdf_icon

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2 )@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) 2 3 2 3 3 3 3 Improved dv/d

0.1. Size:913K samwin
swn4n65dd swnc4n65dd swf4n65dd swmn4n65dd swd4n65dd swyn4n65dd.pdf pdf_icon

SW4N65DD N-channel Enhanced mode TO-251N/TO-251N-S2/TO-220F/TO-220SF /TO-252/TO-220FTN MOSFET Features TO251N TO251N-S2 TO220F TO220SF TO252 TO220FTN BVDSS 650V High ruggedness ID 4A Low RDS(ON) (Typ 2.4 )@VGS=10V RDS(ON) 2.4 Low Gate Charge (Typ 16nC) 1 Improved dv/dt Capability 2 1 1 1 2 1 1 3 2 100% Avalanche Tested 2

0.2. Size:1095K samwin
swf4n65da swn4n65da swd4n65da swnb4n65da.pdf pdf_icon

SW4N65DA N-channel Enhanced mode TO-220F/TO-251N/TO-252/TO-251NX-S4 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 TO-251NX-S4 ID 4A High ruggedness Low RDS(ON) (Typ 3.35 )@VGS=10V RDS(ON) 3.35 Low Gate Charge (Typ 13nC) Improved dv/dt Capability D 1 100% Avalanche Tested 1 1 1 2 2 2 2 3 Application Charger, Adaptor, 3 3 3 LED, TV-Pow

7.1. Size:1007K samwin
swf4n65k2 swn4n65k2 swd4n65k2.pdf pdf_icon

SW4N65K2 N-channel Enhanced mode TO-220F/TO-251N/TO-252 MOSFET Features BVDSS 650V TO-220F TO-251N TO-252 ID 4 A High ruggedness Low RDS(ON) (Typ 1.10 )@VGS=10V RDS(ON) 1.10 Low Gate Charge (Typ 7.1nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 2 Application LED, Charger, Adaptor 2 2 3 3 3 1 1. Gate 2

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