SWSI4N65D - параметры транзистора MOSFET, его аналоги, datasheet

SWSI4N65D Datasheet (PDF)

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swf4n65d swn4n65d swsi4n65d swmi4n65d swui4n65d swd4n65d sws4n65d swb4n65d swp4n65d swmqi4n65d.pdf pdf_icon

SW4N65D SW4N65D N-channel Enhanced mode TO-220F/TO-251N/TO-251S/TO-251M/TO-251U/ TO-252/SOT-82/TO-263 /TO-220/TO-251MQ MOSFET Features TO-220F TO-251M TO-251U TO-251N TO-251S BVDSS : 650V High ruggedness ID : 4A Low RDS(ON) (Typ 2)@VGS=10V 1 1 1 1 1 2 2 2 Low Gate Charge (Typ 18nC) 2 RDS(ON) : 2 3 2 3 3 3 3 Improved dv/d

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swd4n60da swf4n60da swsi4n60da.pdf pdf_icon

SW4N60DA N-channel Enhanced mode TO-252/TO-220F/TO-251S MOSFET Features TO-252 TO-220F TO-251S BVDSS : 600V ID : 4A High ruggedness Low RDS(ON) (Typ3.35)@VGS=10V RDS(ON) : 3.35 Low Gate Charge (Typ 9.6nC) Improved dv/dt Capability 2 1 1 100% Avalanche Tested 1 2 2 2 3 3 Application:DC-DC,LED 3 1 1. Gate 2. Drain 3. Sou

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swf4n60d swy4n60d swi4n60d swsi4n60d swmi4n60d swd4n60d.pdf pdf_icon

SW4N60D N-channel Enhancement mode TO-220F/TO-220FT/TO-251/S/M/TO-252 MOSFET Features BVDSS : 600V TO-251S TO-251M TO-252 TO-220F TO-220FT TO-251 ID : 4A High ruggedness Low RDS(ON) (Typ 1.9) RDS(ON) : 1.9 @VGS=10V Low Gate Charge (Typ 18nC) 1 1 1 2 1 1 2 1 2 2 2 3 Improved dv/dt Capability 2 3 3 2 3 3 3 100% Avalanche T

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swsi4n40dc swd4n40dc.pdf pdf_icon

SW4N40DC N-channel Enhanced mode TO-251S/TO-252 MOSFET Features TO-252 BVDSS : 400V TO-251S ID : 4A High ruggedness Low RDS(ON) (Typ 1.4)@VGS=10V RDS(ON) : 1.4 Low Gate Charge (Typ 11.7nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application:LED, DC-DC 3 3 1. Gate 2. Drain 3. Source 1 General Description 3 This