Справочник MOSFET. SWI7N65D

 

SWI7N65D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SWI7N65D
   Маркировка: SW7N65D
   Тип транзистора: MOSFET
   Полярность: N
   Pdⓘ - Максимальная рассеиваемая мощность: 173.6 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
   |Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
   Tjⓘ - Максимальная температура канала: 150 °C
   Qgⓘ - Общий заряд затвора: 30 nC
   trⓘ - Время нарастания: 36 ns
   Cossⓘ - Выходная емкость: 108 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.4 Ohm
   Тип корпуса: TO-251

 Аналог (замена) для SWI7N65D

 

 

SWI7N65D Datasheet (PDF)

 ..1. Size:1527K  samwin
 swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SWI7N65D SWI7N65D

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

 ..2. Size:1524K  samwin
 sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf

SWI7N65D SWI7N65D

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan

 ..3. Size:1401K  samwin
 swp7n65d swi7n65d swn7n65d swui7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d swy7n65d.pdf

SWI7N65D SWI7N65D

SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeaturesTO-220 TO-251TO-251N TO-251U TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11 112 2 Low Gate Charge (Typ 30nC) 2 22333 33 Improved dv/dt Capability DTO-220FT TO-262N DFN

 7.1. Size:1089K  samwin
 swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf

SWI7N65D SWI7N65D

SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 0.57)@VGS=10V RDS(ON) : 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application: Charge,LED,PC Power 3 3 3

 7.2. Size:1121K  samwin
 swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf

SWI7N65D SWI7N65D

SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO-251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) :0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica

 8.1. Size:843K  samwin
 swf7n60k swi7n60k.pdf

SWI7N65D SWI7N65D

SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) : 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application: AdaptorLED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr

 8.2. Size:999K  samwin
 sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf

SWI7N65D SWI7N65D

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3 3 TV

 8.3. Size:1026K  samwin
 swf7n60d swp7n60d swi7n60d swd7n60d.pdf

SWI7N65D SWI7N65D

SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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