ZVN0540A MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: ZVN0540A
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 0.7 W
Предельно допустимое напряжение сток-исток |Uds|: 400 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 3 V
Максимально допустимый постоянный ток стока |Id|: 0.09 A
Максимальная температура канала (Tj): 150 °C
Выходная емкость (Cd): 70 pf
Сопротивление сток-исток открытого транзистора (Rds): 50 Ohm
Тип корпуса: ELINE
ZVN0540A Datasheet (PDF)
zvn0540a.pdf
N-CHANNEL ENHANCEMENTZVN0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V
zvn0540astoa zvn0540astob zvn0540astz.pdf
N-CHANNEL ENHANCEMENTZVN0540AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD D DE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS. T V ITD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I IT DITI D i VD V ID V VV I T I V V ID VD V V I I V V
zvn0545gta zvn0545gtc.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN0545GMODE VERTICAL DMOS FETISSUE 3 - DECEMBER 1995 FEATURES* 450 Volts VDSD* RDS(on)= 50* Ease of parallelingSDPARTMARKING DETAIL ZVN0545GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 140 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS
zvn0545astob zvn0545astz.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
zvn0545g.pdf
SOT223 N-CHANNEL ENHANCEMENTZVN0545GMODE VERTICAL DMOS FETISSUE 3 - DECEMBER 1995 FEATURES* 450 Volts VDSD* RDS(on)= 50* Ease of parallelingSDPARTMARKING DETAIL ZVN0545GABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 140 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS
zvn0545a.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
zvn0545astoa zvn0545astob.pdf
N-CHANNEL ENHANCEMENTZVN0545AMODE VERTICAL DMOS FETISSUE 2 MARCH 94FEATURES* 450 Volts VDS* RDS(on)= 50D G SE-LineTO92 CompatibleABSOLUTE MAXIMUM RATINGS.PARAMETER SYMBOL VALUE UNITDrain-Source Voltage VDS 450 VContinuous Drain Current at Tamb=25C ID 90 mAPulsed Drain Current IDM 600 mAGate-Source Voltage VGS 20 VPower Dissipation at Tamb=25C Pt
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