SWF7N80D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: SWF7N80D
Маркировка: SW7N80D
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 38 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 800 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 4.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 7 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 39 nC
trⓘ - Время нарастания: 41 ns
Cossⓘ - Выходная емкость: 120 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm
Тип корпуса: TO-220F
SWF7N80D Datasheet (PDF)
sw7n80d swf7n80d swu7n80d swj7n80d.pdf
SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS : 800V Features ID : 7A High ruggedness RDS(ON) : 1.5 Low RDS(ON) (Typ 1.5)@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source
swf7n80d swu7n80d swj7n80d.pdf
SW7N80D N-channel Enhanced mode TO-220F/TO-262/TO-262N MOSFET TO-220F TO-262 TO-262N BVDSS : 800V Features ID : 7A High ruggedness RDS(ON) : 1.5 Low RDS(ON) (Typ 1.5)@VGS=10V Low Gate Charge (Typ 39nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED , Charger, SMPS 1. Gate 2. Drain 3. Source
swf7n60k swi7n60k.pdf
SW7N60K N-channel Enhanced mode TO-220F/TO-251MOSFET Features TO-220F TO-251 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) : 0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 2 2 Application: AdaptorLED 3 3 3 1. Gate 2. Drain 3. Source 1 General Descr
swf7n70k swi7n70k swd7n70k swp7n70k swj7n70k.pdf
SW7N70K N-channel Enhanced mode TO-220F/TO-251/TO-252/TO-220/TO-262N MOSFET BVDSS : 700V TO-262N TO-220F TO-251 TO-252 TO-220 Features ID : 7A High ruggedness RDS(ON) : 0.81 Low RDS(ON) (Typ 0.81)@VGS=10V Low Gate Charge (Typ 17nC) 2 Improved dv/dt Capability 1 1 1 2 2 1 1 2 100% Avalanche Tested 2 2 3 3 3 3 3 Application:
sw7n60d swf7n60d swp7n60d swi7n60d swd7n60d.pdf
SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3 3 TV
swf7n60d swp7n60d swi7n60d swd7n60d.pdf
SW7N60D N-channel Enhancement mode TO-220F/TO-220/TO-251/TO-252 MOSFET Features TO-220F TO-220 TO-251 TO-252 BVDSS : 600V High ruggedness ID : 7A Low RDS(ON) (Typ 1.05)@VGS=10V RDS(ON) : 1.05 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 2 2 2 2 Application:UPSInverter 3 3 3
sw7n70d swd7n70d swn7n70d swj7n70d swf7n70d.pdf
SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 7A Low RDS(ON) (Typ 1.2)@VGS=10V RDS(ON) : 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application:LED, Charger, TV-Power 3
swf7n65dd swn7n65dd swd7n65dd.pdf
SW7N65DD N-channel Enhanced mode TO-220F /TO-251N/TO-252 MOSFET Features TO-251N TO-220F TO-252 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.1 Low Gate Charge (Typ 28nC) 2 Improved dv/dt Capability 1 1 1 100% Avalanche Tested 2 2 2 1 3 3 3 Application: LED, Charge, PC Power 1. Gate 2. Drain 3. So
swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan
swf7n65k2 swi7n65k2 swn7n65k2 swd7n65k2.pdf
SW7N65K2 N-channel Enhanced mode TO-220F/TO-251/TO-251N/TO-252 MOSFET Features TO-220F TO-251 TO-251N TO-252 BVDSS : 650V High ruggedness ID : 7A Low RDS(ON) (Typ 0.57)@VGS=10V RDS(ON) : 0.57 Low Gate Charge (Typ 14.5nC) Improved dv/dt Capability 2 1 100% Avalanche Tested 1 1 1 2 2 2 2 Application: Charge,LED,PC Power 3 3 3
swd7n70d swn7n70d swj7n70d swf7n70d.pdf
SW7N70D N-channel Enhanced mode TO-252/TO-251N/TO-262N/TO-220F MOSFET Features TO-262N TO-220F TO-251N TO-252 BVDSS : 700V High ruggedness ID : 7A Low RDS(ON) (Typ 1.2)@VGS=10V RDS(ON) : 1.2 Low Gate Charge (Typ 30nC) Improved dv/dt Capability 1 100% Avalanche Tested 2 1 1 1 2 2 3 2 2 Application:LED, Charger, TV-Power 3
sw7n65d swp7n65d swi7n65d swn7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-252/TO-220F/TO-220SF /TO-262N/DFN5*6 MOSFETFeaturesTO-220 TO-251TO-251N TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11122 Low Gate Charge (Typ 30nC) 223333 Improved dv/dt Capability DDFN5*6TO-220F TO-220SF TO-262N 100% Avalan
swn7n65m swd7n65m swf7n65m swha7n65m.pdf
SW7N65MN-channel Enhanced mode TO-251N/TO-252/TO-220F/DFN5*6 MOSFETFeaturesTO-251N TO-252 TO-220F DFN5*6BVDSS : 650VID : 7A High ruggedness1 8 Low RDS(ON) (Typ 1.2)@VGS=10V 2 7RDS(ON) : 1.263 Low Gate Charge (Typ 23nC)4 5 Improved dv/dt Capability 21 1 1 100% Avalanche Tested2 2 23 3 3 Application: LED, Charger, PC Power1TO-251
swf7n65k swmn7n65k swi7n65k swn7n65k swd7n65k swp7n65k.pdf
SW7N65K N-channel Enhanced mode TO-220F/TO-220SF/TO-251/TO-251N/TO-252/TO-220 MOSFET Features TO-220F TO-220SF TO-251 TO-251N TO-252 TO-220 BVDSS : 650V ID : 7A High ruggedness Low RDS(ON) (Typ 0.5)@VGS=10V RDS(ON) :0.5 Low Gate Charge (Typ 21nC) Improved dv/dt Capability 2 100% Avalanche Tested 1 1 1 1 1 1 2 2 2 2 2 2 Applica
swp7n65d swi7n65d swn7n65d swui7n65d swd7n65d swf7n65d swmn7n65d swj7n65d swha7n65d swy7n65d.pdf
SW7N65DN-channel Enhanced mode TO-220/TO-251/TO-251N/TO-251U/TO-252/TO-220F/TO-220SF/TO-262N/DFN5*6/TO-220FT MOSFETFeaturesTO-220 TO-251TO-251N TO-251U TO-252BVDSS : 650V High ruggednessID : 7A Low RDS(ON) (Typ 1.1)@VGS=10V RDS(ON) : 1.11 11 112 2 Low Gate Charge (Typ 30nC) 2 22333 33 Improved dv/dt Capability DTO-220FT TO-262N DFN
Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFB3607 , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .
Список транзисторов
Обновления
MOSFET: AOUS66923 | AOUS66920 | AOUS66620 | AOUS66616 | AOUS66416 | AOUS66414 | AOTE32136C | AOTE21115C | AOTS32338C | AOTS32334C | AOTS26108 | AOTS21319C | AOTS21313C | AOTS21311C | AOTS21115C | AOTL66918