Справочник MOSFET. ISCNH327P

 

ISCNH327P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ISCNH327P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 300 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 85 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A
   Tj ⓘ - Максимальная температура канала: 175 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для ISCNH327P

   - подбор ⓘ MOSFET транзистора по параметрам

 

ISCNH327P Datasheet (PDF)

 ..1. Size:261K  inchange semiconductor
iscnh327p.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH327PFEATURESDrain Current I = 200A@ T =25D CDrain Source Voltage-: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 6m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.1. Size:255K  inchange semiconductor
iscnh320k.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH320KFEATURESDrain Current I = 30A@ T =25D CDrain Source Voltage-: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 135m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedImproved dv/dt capab

 7.2. Size:304K  inchange semiconductor
iscnh325w.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH325WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 650V(Min)DSSStatic Drain-Source On-Resistance: R = 90m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

 7.3. Size:304K  inchange semiconductor
iscnh328w.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH328WFEATURESDrain Current : I = 6A@ T =25D CDrain Source Voltage: V = 1000V(Min)DSSStatic Drain-Source On-Resistance: R = 1.5(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.A

Другие MOSFET... P7515BDB , PM5G8EA , PR804BA33 , QM0005D , QN4103M6N , ISCNH310P , ISCNH320K , ISCNH325W , 75N75 , ISCNH328W , ISCNH339D , ISCNH340B , ISCNH342P , ISCNH342W , ISCNH345P , ISCNH346F , ISCNL343D .

History: TK8B50D | SI7309DN | NTR2101PT1G | STI33N65M2 | CS6N80A0H | ISCNH339D | IRFZ48V

 

 
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