ISCNH327P - описание и поиск аналогов

 

ISCNH327P. Аналоги и основные параметры

Наименование производителя: ISCNH327P

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 300 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 85 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 200 A

Tj ⓘ - Максимальная температура канала: 175 °C

Электрические характеристики

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.006 Ohm

Тип корпуса: TO220

Аналог (замена) для ISCNH327P

- подборⓘ MOSFET транзистора по параметрам

 

ISCNH327P даташит

 ..1. Size:261K  inchange semiconductor
iscnh327p.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH327P FEATURES Drain Current I = 200A@ T =25 D C Drain Source Voltage- V = 85V(Min) DSS Static Drain-Source On-Resistance R = 6m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

 7.1. Size:255K  inchange semiconductor
iscnh320k.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH320K FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage- V = 650V(Min) DSS Static Drain-Source On-Resistance R = 135m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed Improved dv/dt capab

 7.2. Size:304K  inchange semiconductor
iscnh325w.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH325W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 650V(Min) DSS Static Drain-Source On-Resistance R = 90m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

 7.3. Size:304K  inchange semiconductor
iscnh328w.pdfpdf_icon

ISCNH327P

isc N-Channel MOSFET Transistor ISCNH328W FEATURES Drain Current I = 6A@ T =25 D C Drain Source Voltage V = 1000V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. A

Другие MOSFET... P7515BDB , PM5G8EA , PR804BA33 , QM0005D , QN4103M6N , ISCNH310P , ISCNH320K , ISCNH325W , 18N50 , ISCNH328W , ISCNH339D , ISCNH340B , ISCNH342P , ISCNH342W , ISCNH345P , ISCNH346F , ISCNL343D .

History: SM4504NHKP | 2SK2957L | STD15NF10 | SI6423DQ-T1 | HY3810PM | AUIRF7103Q

 

 

 

 

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