ZVN3306F - описание и поиск аналогов

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * RDS(on)=5 S * 60 Volt VDS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 150 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20

SOT23 N-CHANNEL ENHANCEMENT ZVN3306F MODE VERTICAL DMOS FET ISSUE 3 JANUARY 1996 FEATURES * RDS(on)=5 S * 60 Volt VDS D COMPLEMENTARY TYPE - ZVP3306F G PARTMARKING DETAIL - MC SOT23 ABSOLUTE MAXIMUM RATINGS. PARAMETER SYMBOL VALUE UNIT Drain-Source Voltage VDS 60 V Continuous Drain Current at Tamb=25 C ID 150 mA Pulsed Drain Current IDM 3A Gate-Source Voltage VGS 20

ZVN3306FTA www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G

N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5 D G S ID= E-Line 1A TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.5A PARAMETER SYMBOL VALUE UNIT 0.25A Drain-Source Voltage VDS 60 V 10 Continuous Drain Current at Tamb=25 C ID 270 mA Pulsed Drain Current IDM 3A cs Gate-Source Voltage VGS 20 V Power Dissip

N-CHANNEL ENHANCEMENT ZVN3306A MODE VERTICAL DMOS FET ISSUE 2 MARCH 94 FEATURES * 60 Volt VDS * RDSon)=5 D G S ID= E-Line 1A TO92 Compatible ABSOLUTE MAXIMUM RATINGS. 0.5A PARAMETER SYMBOL VALUE UNIT 0.25A Drain-Source Voltage VDS 60 V 10 Continuous Drain Current at Tamb=25 C ID 270 mA Pulsed Drain Current IDM 3A cs Gate-Source Voltage VGS 20 V Power Dissip