Справочник MOSFET. ISCNH342P

 

ISCNH342P Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: ISCNH342P
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 150 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 200 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.065 Ohm
   Тип корпуса: TO220
 

 Аналог (замена) для ISCNH342P

   - подбор ⓘ MOSFET транзистора по параметрам

 

ISCNH342P Datasheet (PDF)

 ..1. Size:260K  inchange semiconductor
 iscnh342p.pdf pdf_icon

ISCNH342P

isc N-Channel MOSFET Transistor ISCNH342PFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(

 6.1. Size:302K  inchange semiconductor
 iscnh342w.pdf pdf_icon

ISCNH342P

isc N-Channel MOSFET Transistor ISCNH342WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(

 7.1. Size:329K  inchange semiconductor
 iscnh340b.pdf pdf_icon

ISCNH342P

isc N-Channel MOSFET Transistor ISCNH340BFEATURESDrain Current : I = 135A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

 7.2. Size:246K  inchange semiconductor
 iscnh345p.pdf pdf_icon

ISCNH342P

isc N-Channel MOSFET Transistor ISCNH345PFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC co

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... QN4103M6N , ISCNH310P , ISCNH320K , ISCNH325W , ISCNH327P , ISCNH328W , ISCNH339D , ISCNH340B , IRF2807 , ISCNH342W , ISCNH345P , ISCNH346F , ISCNL343D , ISCNL344D , ISCPL322D , IXFH60N60X2A , MN7R6-60PS .

History: MEE7816S-G | SWF13N65K2 | CS40N20A8 | IRLZ44ZS | NCEP040N10GU | SWF4N65DA | DH012N03D

 

 
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