ISCNH342P - аналоги, параметры транзистора - Справочник транзисторов

ISCNH342P даташит

..1. Size:260K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH342P FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(

6.1. Size:302K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH342W FEATURES Drain Current I = 40A@ T =25 D C Drain Source Voltage V = 200V(Min) DSS Static Drain-Source On-Resistance R = 65m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION Low gate charge Fast switching speed ABSOLUTE MAXIMUM RATINGS(

7.1. Size:329K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH340B FEATURES Drain Current I = 135A@ T =25 D C Drain Source Voltage V = 100V(Min) DSS Static Drain-Source On-Resistance R = 4.0m (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive.

7.2. Size:246K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH345P FEATURES Drain Current I = 3.0A@ T =25 D C Drain Source Voltage- V = 1500V(Min) DSS Static Drain-Source On-Resistance R = 9 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High speed power switching Switching regulator, DC-DC co