ISCNH342W - параметры транзистора MOSFET, его аналоги, datasheet

ISCNH342W Datasheet (PDF)

..1. Size:302K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH342WFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(

6.1. Size:260K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH342PFEATURESDrain Current : I = 40A@ T =25D CDrain Source Voltage: V = 200V(Min)DSSStatic Drain-Source On-Resistance: R = 65m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONLow gate chargeFast switching speedABSOLUTE MAXIMUM RATINGS(

7.1. Size:329K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH340BFEATURESDrain Current : I = 135A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R = 4.0m(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid drive.

7.2. Size:246K inchange semiconductor
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isc N-Channel MOSFET Transistor ISCNH345PFEATURESDrain Current I = 3.0A@ T =25D CDrain Source Voltage-: V = 1500V(Min)DSSStatic Drain-Source On-Resistance: R = 9(Max)DS(on)100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh speed power switchingSwitching regulator, DC-DC co