WMP07N80M3 - описание и поиск аналогов

 

WMP07N80M3. Аналоги и основные параметры

Наименование производителя: WMP07N80M3

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 55 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 800 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 6.8 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 13 ns

Cossⓘ - Выходная емкость: 14 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.8 Ohm

Тип корпуса: TO251

Аналог (замена) для WMP07N80M3

- подборⓘ MOSFET транзистора по параметрам

 

WMP07N80M3 даташит

 ..1. Size:679K  way-on
wml07n80m3 wmn07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3.pdfpdf_icon

WMP07N80M3

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 ..2. Size:679K  way-on
wml07n80m3 wmm07n80m3 wmo07n80m3 wmp07n80m3 wmk07n80m3 wmn07n80m3.pdfpdf_icon

WMP07N80M3

WML07N80M3, W 80M3, WM M3 WMN07N8 MM07N80M WMO0 80M3, WM M3 07N80M3, WMP07N8 MK07N80M 800 Junction ET 0V 1.6 Super J n Power MOSFE Descrip ption WMOSTM M3 is Wayo neration 800 M on s 3rd gen 0V super junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G T and low ga charge perf

 8.1. Size:731K  way-on
wml07n100c2 wmn07n100c2 wmm07n100c2 wmj07n100c2 wmo07n100c2 wmp07n100c2 wmk07n100c2.pdfpdf_icon

WMP07N80M3

WM 2, WMN07N MM07N100C ML07N100C2 N100C2, WM C2 WMJ07N100C2, WM C2, WMP07N MK07N100C MO07N100C N100C2, WM C2 1000V Super Ju MOSFET V 2.0 S unction Power M T Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily S balance te or extremely esistance D echnology fo y low on-re S S G D D G G G and low

 8.2. Size:636K  way-on
wml07n65c2 wmh07n65c2 wmm07n65c2 wmo07n65c2 wmp07n65c2 wmg07n65c2.pdfpdf_icon

WMP07N80M3

WML0 MM07N65C 07N65C2, WMH07N65C2, WM C2 WMO0 MG07N65C 07N65C2, WMP07N65C2, WM C2 650 Junction ET 0V 1.0 Super J n Power MOSFE Descrip ption WMOSTM C2 is Wa 2nd generation super ayon s n junction MOSFET fa that is utilizing charge M amily balance te or extremely esistance echnology fo y low on-re and low ga charge performanc WMOSTM C2 is ate ce. TO-220F TO TO-25

Другие MOSFET... VIS30019 , VIS30023 , VIS30024 , VS3P07C , WMB128N10T2 , WML07N80M3 , WMM07N80M3 , WMO07N80M3 , EMB04N03H , WMK07N80M3 , WMN07N80M3 , WML26N60C4 , WMK26N60C4 , WMN26N60C4 , WMM26N60C4 , WMO26N60C4 , WMJ26N60C4 .

History: AOI518 | IRF8252 | AOC2870

 

 

 

 

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