Справочник MOSFET. WTM2302

 

WTM2302 Даташит. Основные параметры и характеристики. Поиск аналогов


   Наименование прибора: WTM2302
   Тип транзистора: MOSFET
   Полярность: N
   Pd ⓘ - Максимальная рассеиваемая мощность: 0.8 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 20 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 12 V
   |Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A
   Tj ⓘ - Максимальная температура канала: 150 °C
   tr ⓘ - Время нарастания: 3.2 ns
   Cossⓘ - Выходная емкость: 48 pf
   Rds ⓘ - Сопротивление сток-исток открытого транзистора: 0.056 Ohm
   Тип корпуса: SOT23
 

 Аналог (замена) для WTM2302

   - подбор ⓘ MOSFET транзистора по параметрам

 

WTM2302 Datasheet (PDF)

 ..1. Size:762K  wpmtek
 wtm2302.pdf pdf_icon

WTM2302

WTM2302N-Channel Enhancement Mode Power MOSFETDescription The WTM2302 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 2.6AR

 8.1. Size:730K  wpmtek
 wtm2300.pdf pdf_icon

WTM2302

WTM2300N-Channel Enhancement Mode Power MOSFETDescription The WTM2300 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = 20V, lD = 6AR

 8.2. Size:782K  wpmtek
 wtm2306.pdf pdf_icon

WTM2302

WTM2306N-Channel Enhancement Mode Power MOSFETDescription The WTM2306 uses advanced trench technology to provideexcellent R , This device is suitable for use as aDS(ON)battery protection or in other switching application.Features V DS = 30V, lD = 3.6AR

 8.3. Size:718K  wpmtek
 wtm2301.pdf pdf_icon

WTM2302

WTM2301P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provideexcellent R , low gate charge and operation with gateDS(ON)voltages as low as 2.5V. This device is suitable for use as abattery protection or in other switching application.Features V DS = -20V, lD = -3AR

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WFD7N65L , WFF2N65L , WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , WTM2301 , IRFB4110 , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 .

History: SRC65R650B | ZXMP10A17G | SSTSD201 | FCH041N60E | 3080K | SI4062DY | STH110N10F7-2

 

 
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