WTM2302 - описание и поиск аналогов

 

WTM2302. Аналоги и основные параметры

Наименование производителя: WTM2302

Тип транзистора: MOSFET

Полярность: N

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 0.8 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 2.6 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 3.2 ns

Cossⓘ - Выходная емкость: 48 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.056 Ohm

Тип корпуса: SOT23

Аналог (замена) для WTM2302

- подборⓘ MOSFET транзистора по параметрам

 

WTM2302 даташит

 ..1. Size:762K  wpmtek
wtm2302.pdfpdf_icon

WTM2302

WTM2302 N-Channel Enhancement Mode Power MOSFET Description The WTM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 2.6A R

 8.1. Size:730K  wpmtek
wtm2300.pdfpdf_icon

WTM2302

WTM2300 N-Channel Enhancement Mode Power MOSFET Description The WTM2300 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 6A R

 8.2. Size:782K  wpmtek
wtm2306.pdfpdf_icon

WTM2302

WTM2306 N-Channel Enhancement Mode Power MOSFET Description The WTM2306 uses advanced trench technology to provide excellent R , This device is suitable for use as a DS(ON) battery protection or in other switching application. Features V DS = 30V, lD = 3.6A R

 8.3. Size:718K  wpmtek
wtm2301.pdfpdf_icon

WTM2302

WTM2301 P-Channel Enhancement Mode Power MOSFET Description The WTM2301 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = -20V, lD = -3A R

Другие MOSFET... WFD7N65L , WFF2N65L , WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , WTM2301 , AON6414A , WTM2305 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 .

History: 2SK2466 | WMO14N60C4 | WML13N65EM | VS4410AT | 2N60A

 

 

 

 

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