WTM2305 - описание и поиск аналогов

 

WTM2305. Аналоги и основные параметры

Наименование производителя: WTM2305

Тип транзистора: MOSFET

Полярность: P

Предельные значения

Pd ⓘ - Максимальная рассеиваемая мощность: 1.7 W

|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V

|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V

|Id| ⓘ - Максимально допустимый постоянный ток стока: 3 A

Tj ⓘ - Максимальная температура канала: 150 °C

Электрические характеристики

tr ⓘ - Время нарастания: 35 ns

Cossⓘ - Выходная емкость: 290 pf

RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.052 Ohm

Тип корпуса: SOT23

Аналог (замена) для WTM2305

- подборⓘ MOSFET транзистора по параметрам

 

WTM2305 даташит

 ..1. Size:742K  wpmtek
 wtm2305.pdf pdf_icon

WTM2305

WTM2305 P-Channel Enhancement Mode Power MOSFET Description The WTM2305 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = -20V, lD = -4.1A R

 8.1. Size:762K  wpmtek
 wtm2302.pdf pdf_icon

WTM2305

WTM2302 N-Channel Enhancement Mode Power MOSFET Description The WTM2302 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 2.6A R

 8.2. Size:730K  wpmtek
 wtm2300.pdf pdf_icon

WTM2305

WTM2300 N-Channel Enhancement Mode Power MOSFET Description The WTM2300 uses advanced trench technology to provide excellent R , low gate charge and operation with gate DS(ON) voltages as low as 2.5V. This device is suitable for use as a battery protection or in other switching application. Features V DS = 20V, lD = 6A R

 8.3. Size:782K  wpmtek
 wtm2306.pdf pdf_icon

WTM2305

WTM2306 N-Channel Enhancement Mode Power MOSFET Description The WTM2306 uses advanced trench technology to provide excellent R , This device is suitable for use as a DS(ON) battery protection or in other switching application. Features V DS = 30V, lD = 3.6A R

ПОКАЗАТЬ ЕЩЁ

Другие MOSFET... WFF2N65L , WFF5N65L , WFF8N65L , WFJ5N65B , WFU2N65L , WTM2300 , WTM2301 , WTM2302 , IRFB4115 , WTM2306 , WTM3400 , WTM3401 , WTM3415 , TX15N10B , TX40N06B , TX50N06 , XG65T125PS1B .

History: VS5814DS | WMK90R260S | 2SK2398 | WSF09N20 | SGM0410 | WSF20N06 | RU75N08R

 

 

 

 

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