2N7002AK - описание и поиск аналогов

A 2N7002 K SOT-23 N-Channel Enhancement MOSFET 3 High Speed Switching Applications ESD protected gate 2 1.GATE Low ON-resistance 2.SOURCE RDS(on) = 2.8 (typ.) (@VGS = 10 V) 3.DRAIN 1 RDS(on) = 3.1 (typ.) (@VGS = 5 V) Simplified outline(SOT-23) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) 3 Marking Code NJ 1 2 Equivalent Circuit (top view) Absolute Maximum Ratings

T2N7002AK TOSHIBA Field-Effect Transistor Silicon N-Channel MOS Type T2N7002AK High Speed Switching Applications ESD protected gate Low ON-resistance RDS(on) = 2.8 (typ.) (@VGS = 10 V) RDS(on) = 3.1 (typ.) (@VGS = 5 V) RDS(on) = 3.2 (typ.) (@VGS = 4.5 V) Absolute Maximum Ratings (Ta = 25 C) Characteristic Symbol Rating Unit 1. Gate 2. Source Drai

BR2N7002AK2 Rev.D Oct.-2023 DATA SHEET / Descriptions SOT-23 N MOS N-CHANNEL MOSFET in a SOT-23 Plastic Package. / Features 2KV Sensitive gate trigger current and Low Holding current.ESD protected up to 2KV, HF Product. / Application

2N7002AQ N-CHANNEL ENHANCEMENT MODE MOSFET Product Summary Features and Benefits ID max Low On-Resistance V(BR)DSS RDS(ON) max TA = +25 C Low Gate Threshold Voltage 60V 6 @ VGS = 5V 200mA Low Input Capacitance Fast Switching Speed Small Surface Mount Package Description ESD Protected Gate, 1.2kV HBM This MOSFET is designed to minimize the on-s

2N7002A N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data N-Channel MOSFET Case SOT-23 Low On-Resistance Case Material Molded Plastic. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020D Low Input Ca

2N7002A Features High Density Cell Design for Low RDS(ON) Voltage Controlled Small Signal Switch Epoxy Meets UL 94 V-0 Flammability Rating Moisture Sensitivity Level 1 N-Channel Halogen Free. Green Device (Note 1) Lead Free Finish/RoHS Compliant ("P" Suffix Designates RoHS MOSFET Compliant. See Ordering Information) Maximum Ratings Operating Junct

2N7002A SEMICONDUCTOR N CHANNEL ENHANCEMENT MODE TECHNICAL DATA FIELD EFFECT TRANSISTOR INTERFACE AND SWITCHING APPLICATION. FEATURES E L B L High density cell design for low RDS(ON). DIM MILLIMETERS Voltage controolled small signal switch. _ A + 2.93 0.20 B 1.30+0.20/-0.15 Rugged and reliable. C 1.30 MAX 2 3 High saturation current capablity. D 0.45+0.15/-0.05 E 2.40+0.3

CMT2N7002AG SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor High Density Cell Design for Low RDS(ON) is produced using high cell density, DMOS technology. Voltage Controlled Small Signal Switch These products have been designed to minimize Rugged and Reliable on-state resistance while provide rugged, reliable, and High

WST2N7002A N-Ch MOSFET General Description Product Summery The WST2N7002A is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 60V 0.14 700mA excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WST2N7002A meet the RoHS and Green Product requirement wi