SPC10N65G Даташит. Основные параметры и характеристики. Поиск аналогов
Наименование прибора: SPC10N65G
Тип транзистора: MOSFET
Полярность: N
Pd ⓘ - Максимальная рассеиваемая мощность: 40 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 650 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 10 A
Tj ⓘ - Максимальная температура канала: 150 °C
tr ⓘ - Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 125 pf
Rds ⓘ - Сопротивление сток-исток открытого транзистора: 1.1 Ohm
Тип корпуса: TO220F
Аналог (замена) для SPC10N65G
SPC10N65G Datasheet (PDF)
spc10n65g.pdf

SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App
spc10n80g.pdf

SPC10N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=10A(Vgs=10V) R max. at 25oC () V =10V 1.2DS(on) GS Ultra Low Gate Charge Q max. (nC) 70 g Improved dv/dt Capability Q (nC) 14 gs 100% Avalanche Tested Q (nC) 21 gd RoHS compliant Configuration single A
spc1016.pdf

SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1016 is the Dual P-Channel enhancement mode Portable Equipment power field effect transistors are produced using high cell Battery Powered System density , DMOS trench technology. This high density DC/DC Converter process is especially tailored to minimize on-state
spc1018.pdf

SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1810 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta
Другие MOSFET... YWNM6001 , 2N7002AK , 2310 , 3407 , SPA22N65G , SPA24N50G , SPA65R38G , SPA65R72G , IRF9540N , SPC10N80G , SPC16N65G , SPC18N50G , SPC20N65G , SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G .
History: SVT044R5NDTR | SI4862DY
History: SVT044R5NDTR | SI4862DY



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