SPC10N65G - аналоги, параметры транзистора - Справочник транзисторов

SPC10N65G даташит

..1. Size:909K cn sinai power
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SPC10N65G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 700 DS J ID=10A(Vgs=10V) R max. at 25oC ( ) V =10V 1.1 DS(on) GS Ultra Low Gate Charge Q max. (nC) 45 g Improved dv/dt Capability Q (nC) 7 gs 100% Avalanche Tested Q (nC) 15 gd RoHS compliant Configuration single App

8.1. Size:821K cn sinai power
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SPC10N80G Sinai Power Technologies www.sinai-power.com N-channel Power MOSFET PRODUCT SUMMARY Features V (V) at T max. 850 DS J ID=10A(Vgs=10V) R max. at 25oC ( ) V =10V 1.2 DS(on) GS Ultra Low Gate Charge Q max. (nC) 70 g Improved dv/dt Capability Q (nC) 14 gs 100% Avalanche Tested Q (nC) 21 gd RoHS compliant Configuration single A

9.1. Size:266K syncpower
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SPC1016 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1016 is the Dual P-Channel enhancement mode Portable Equipment power field effect transistors are produced using high cell Battery Powered System density , DMOS trench technology. This high density DC/DC Converter process is especially tailored to minimize on-state

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SPC1810 N & P Pair Enhancement Mode MOSFET DESCRIPTION APPLICATIONS Power Management in Note book The SPC1810 is the N- and P-Channel enhancement Portable Equipment mode power field effect transistors are produced using Battery Powered System high cell density , DMOS trench technology. This high DC/DC Converter density process is especially tailored to minimize on-sta

Другие MOSFET... YWNM6001 , 2N7002AK , 2310 , 3407 , SPA22N65G , SPA24N50G , SPA65R38G , SPA65R72G , SKD502T , SPC10N80G , SPC16N65G , SPC18N50G , SPC20N65G , SPC4N65G , SPC65R180G , SPB65R180G , SPC65R360G .