TDM3482. Аналоги и основные параметры
Наименование производителя: TDM3482
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 27.8 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 43 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 6.6 ns
Cossⓘ - Выходная емкость: 191 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.0095 Ohm
Тип корпуса: PPAK3X3-8
Аналог (замена) для TDM3482
- подборⓘ MOSFET транзистора по параметрам
TDM3482 даташит
..1. Size:795K techcode semi
tdm3482.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3482 DESCRIPTION The TDM3482 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
8.1. Size:749K techcode semi
tdm3484.pdf 

DATASHEET Techcode Dual N-Channel Enhancement Mode MOSFET TDM3484 DESCRIPTION The TDM3484 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.1. Size:374K techcode semi
tdm3428b.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3428B DESCRIPTION The TDM3428B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.2. Size:633K techcode semi
tdm3407.pdf 

DATASHEET Techcode P-Channel Enhancement Mode MOSFET TDM3407 DESCRIPTION The TDM3407 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES 40V PMOS RDS(ON)
9.3. Size:641K techcode semi
tdm3466.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3466 DESCRIPTION The TDM3466 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.5. Size:368K techcode semi
tdm3436.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3436 DESCRIPTION The TDM3436 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.6. Size:266K techcode semi
tdm3424.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3424 DESCRIPTION The TDM3424 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.8. Size:383K techcode semi
tdm3458.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3458 DESCRIPTION The TDM3458 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.9. Size:865K techcode semi
tdm3412.pdf 

DATASHEET Techcode Dual N-Channel Enhancement Mode MOSFET TDM3412 DESCRIPTION The TDM3412 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES Channel 1 RDS(ON)
9.10. Size:323K techcode semi
tdm3420.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3420 DESCRIPTION The TDM3420 uses advanced trench technology to provide excellent RDS(ON) and low gate charge .This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.11. Size:353K techcode semi
tdm3426b.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3426B DESCRIPTION The TDM3426B uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.12. Size:692K techcode semi
tdm3408.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3408 DESCRIPTION The TDM3408 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.13. Size:375K techcode semi
tdm3434.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3434 DESCRIPTION The TDM3434 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.15. Size:420K techcode semi
tdm3478.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3478 DESCRIPTION The TDM3478 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.16. Size:370K techcode semi
tdm3432.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3432 DESCRIPTION The TDM3432 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.17. Size:622K techcode semi
tdm3406.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3406 DESCRIPTION The TDM3406 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.19. Size:330K techcode semi
tdm3452.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3452 DESCRIPTION The TDM3452 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.20. Size:205K techcode semi
tdm3430.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3430 DESCRIPTION The TDM3430 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
9.21. Size:362K techcode semi
tdm3444.pdf 

DATASHEET Techcode N-Channel Enhancement Mode MOSFET TDM3444 DESCRIPTION The TDM3444 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. GENERAL FEATURES RDS(ON)
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