SL3409 - Даташиты. Аналоги. Основные параметры

SL3409P-Channel Enhancement-Mode MOS FETsP Enhancement-Mode MOS FETsSOT-23MAXIMUM RATINGSMAXIMUM RATINGS MAXIMUM RATINGSMAXIMUM RATINGSCharacteristic Symbol Max UnitDrain-Source VoltageBV -30 VDSSGate- Source Voltage V +20 VGSDrain Current (continuous) I -2.2 ADDrain Current (pulsed) I -16 ADMTotal Device DissipationPD 1000 mWTA=25Junction T 150

SL3401ASOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com4

SL3407P-Channel Power MOSFET DGeneral Features VDS = -30V,ID = -4.1A GRDS(ON)

SL3400N-Channel Power MOSFET DGeneral Features VDS = 30V,ID = 5.8A GRDS(ON)

SL3406N-Channel Power MOSFET Product Summary V 30VDS I 5.6AD R ( at V =10V) 29 mohmDS(ON) GS R ( at V =4.5V) 40 mohmDS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for low RDS(ON) High Speed switchingApplications Battery protection Load switch Power management Absolute Maximum

SL3404SOT-23 Package Information Dimensions in Millimeters Symbol MIN. MAX.A 0.900 1.150A1 0.000 0.100A2 0.900 1.050b 0.300 0.500c 0.080 0.150D 2.800 3.000E 1.200 1.400E1 2.250 2.550e 0.950TYPe1 1.800 2.000L 0.550REFL1 0.300 0.500 0 8www.slkormicro.com3

SL3401P-Channel Power MOSFET DGeneral Features G VDS = -30V,ID = -4.1A RDS(ON)

SL3402N-Channel Power MOSFET DGeneral Features VDS = 30V,ID = 4A GRDS(ON)

SL3401SP-Channel Power MOSFET DGeneral Features G VDS = -30V,ID = -4A RDS(ON)