2SK2870S - описание и поиск аналогов

 ..1. Size:286K  inchange semiconductor
 2sk2870s.pdf 

isc N-Channel MOSFET Transistor 2SK2870S FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 7.1. Size:268K  1
 2sk2870-01l 2sk2870-01s.pdf 

2SK2870-01L,S FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching T-pack(L) T-pack(S) Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent circuit

 7.2. Size:354K  inchange semiconductor
 2sk2870l.pdf 

isc N-Channel MOSFET Transistor 2SK2870L FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi

 8.1. Size:89K  1
 2sk2874-01l 2sk2874-01s.pdf 

FUJI POWER MOSFET 2SK2874-01L,S N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series T-pack (S) T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent cir

 8.2. Size:78K  1
 2sk2877-01.pdf 

FUJI POWER MOSFET 2SK2877-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=

 8.3. Size:78K  1
 2sk2871-01.pdf 

FUJI POWER MOSFET 2SK2871-01 N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (

 8.4. Size:79K  1
 2sk2873-01.pdf 

FUJI POWER MOSFET 2SK2873-01 N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=

 8.5. Size:77K  1
 2sk2875-01.pdf 

FUJI POWER MOSFET 2SK2875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (

 8.6. Size:248K  fuji
 2sk2879-01.pdf 

N-channel MOS-FET 2SK2879-01 FAP-IIS Series 500V 0,38 20A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characte

 8.7. Size:245K  fuji
 2sk2876-01mr.pdf 

N-channel MOS-FET 2SK2876-01MR FAP-IIS Series 500V 1,5 6A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character

 8.8. Size:236K  fuji
 2sk2872.pdf 

N-channel MOS-FET 2SK2872-01MR FAP-IIS Series 450V 1,2 8A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character

 8.9. Size:286K  inchange semiconductor
 2sk2879-01.pdf 

isc N-Channel MOSFET Transistor 2SK2879-01 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.10. Size:286K  inchange semiconductor
 2sk2877-01.pdf 

isc N-Channel MOSFET Transistor 2SK2877-01 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.11. Size:289K  inchange semiconductor
 2sk2871-01.pdf 

isc N-Channel MOSFET Transistor 2SK2871-01 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.12. Size:279K  inchange semiconductor
 2sk2876-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK2876-01MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.13. Size:286K  inchange semiconductor
 2sk2873-01.pdf 

isc N-Channel MOSFET Transistor 2SK2873-01 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.14. Size:354K  inchange semiconductor
 2sk2874-01l.pdf 

isc N-Channel MOSFET Transistor 2SK2874-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole

 8.15. Size:280K  inchange semiconductor
 2sk2872-01mr.pdf 

isc N-Channel MOSFET Transistor 2SK2872-01MR FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol

 8.16. Size:288K  inchange semiconductor
 2sk2875-01.pdf 

isc N-Channel MOSFET Transistor 2SK2875-01 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen

 8.17. Size:286K  inchange semiconductor
 2sk2874-01s.pdf 

isc N-Channel MOSFET Transistor 2SK2874-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole