2SK2873-01. Аналоги и основные параметры
Наименование производителя: 2SK2873-01
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 60 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 450 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 35 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 8 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 45 ns
Cossⓘ - Выходная емкость: 100 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 1.2 Ohm
Тип корпуса: TO3P
Аналог (замена) для 2SK2873-01
- подборⓘ MOSFET транзистора по параметрам
2SK2873-01 даташит
..1. Size:79K 1
2sk2873-01.pdf 
FUJI POWER MOSFET 2SK2873-01 N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=
..2. Size:286K inchange semiconductor
2sk2873-01.pdf 
isc N-Channel MOSFET Transistor 2SK2873-01 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.1. Size:89K 1
2sk2874-01l 2sk2874-01s.pdf 
FUJI POWER MOSFET 2SK2874-01L,S N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series T-pack (S) T-pack (L) Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent cir
8.2. Size:78K 1
2sk2877-01.pdf 
FUJI POWER MOSFET 2SK2877-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-3P Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (Tc=
8.3. Size:78K 1
2sk2871-01.pdf 
FUJI POWER MOSFET 2SK2871-01 N-CHANNEL SILICON POWER MOSFET FAP-2S Series Outline Drawings TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (
8.4. Size:268K 1
2sk2870-01l 2sk2870-01s.pdf 
2SK2870-01L,S FUJI POWER MOSFET 200509 N-CHANNEL SILICON POWER MOSFET FAP-IIS SERIES Outline Drawings Features High speed switching T-pack(L) T-pack(S) Low on-resistance No secondary breakdown Low driving power High voltage Avalanche-proof Applications Switching regulators DC-DC converters General purpose power amplifier Maximum ratings and characteristics Equivalent circuit
8.5. Size:77K 1
2sk2875-01.pdf 
FUJI POWER MOSFET 2SK2875-01 N-CHANNEL SILICON POWER MOSFET Outline Drawings FAP-2S Series TO-220AB Features High speed switching Low on-resistance No secondary breadown Low driving power Avalanche-proof Applications Switching regulators UPS (Uninterruptible Power Supply) DC-DC converters Maximum ratings and characteristicAbsolute maximum ratings Equivalent circuit schematic (
8.6. Size:248K fuji
2sk2879-01.pdf 
N-channel MOS-FET 2SK2879-01 FAP-IIS Series 500V 0,38 20A 150W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Characte
8.7. Size:245K fuji
2sk2876-01mr.pdf 
N-channel MOS-FET 2SK2876-01MR FAP-IIS Series 500V 1,5 6A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character
8.8. Size:236K fuji
2sk2872.pdf 
N-channel MOS-FET 2SK2872-01MR FAP-IIS Series 450V 1,2 8A 30W > Features > Outline Drawing - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS = 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Amplifier > Maximum Ratings and Character
8.9. Size:286K inchange semiconductor
2sk2879-01.pdf 
isc N-Channel MOSFET Transistor 2SK2879-01 FEATURES Drain Current I = 20A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 0.38 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.10. Size:286K inchange semiconductor
2sk2877-01.pdf 
isc N-Channel MOSFET Transistor 2SK2877-01 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.11. Size:289K inchange semiconductor
2sk2871-01.pdf 
isc N-Channel MOSFET Transistor 2SK2871-01 FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.12. Size:279K inchange semiconductor
2sk2876-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK2876-01MR FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.13. Size:354K inchange semiconductor
2sk2870l.pdf 
isc N-Channel MOSFET Transistor 2SK2870L FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.14. Size:286K inchange semiconductor
2sk2870s.pdf 
isc N-Channel MOSFET Transistor 2SK2870S FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi
8.15. Size:354K inchange semiconductor
2sk2874-01l.pdf 
isc N-Channel MOSFET Transistor 2SK2874-01L FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
8.16. Size:280K inchange semiconductor
2sk2872-01mr.pdf 
isc N-Channel MOSFET Transistor 2SK2872-01MR FEATURES Drain Current I = 8.0A@ T =25 D C Drain Source Voltage V = 450V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sol
8.17. Size:288K inchange semiconductor
2sk2875-01.pdf 
isc N-Channel MOSFET Transistor 2SK2875-01 FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solen
8.18. Size:286K inchange semiconductor
2sk2874-01s.pdf 
isc N-Channel MOSFET Transistor 2SK2874-01S FEATURES Drain Current I = 6.0A@ T =25 D C Drain Source Voltage V = 500V(Min) DSS Static Drain-Source On-Resistance R = 1.5 (Max) @V =10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and sole
Другие IGBT... 2SK2838K, 2SK2849L, 2SK2849S, 2SK2870-01L, 2SK2870-01S, 2SK2870L, 2SK2870S, 2SK2871-01, P55NF06, 2SK2874-01L, 2SK2874-01S, 2SK2875-01, 2SK2877-01, 2SK2883B, 2SK2883K, 2SK2884B, 2SK2884K
