2SK3033 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3033
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 60 W
Предельно допустимое напряжение сток-исток |Uds|: 100 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Пороговое напряжение включения |Ugs(th)|: 2.5 V
Максимально допустимый постоянный ток стока |Id|: 40 A
Максимальная температура канала (Tj): 150 °C
Время нарастания (tr): 20 ns
Выходная емкость (Cd): 530 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.06 Ohm
Тип корпуса: TO220F
2SK3033 Datasheet (PDF)
2sk3033.pdf
Power F-MOS FETs2SK3033 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor
2sk3033.pdf
isc N-Channel MOSFET Transistor 2SK3033FEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =60m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3032.pdf
Power F-MOS FETs2SK3032 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.05
2sk3034.pdf
Power F-MOS FETs2SK3034 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance No secondary breakdown4.60.2 Low-voltage drive9.90.3 2.90.2 High electrostatic breakdown voltage 3.20.1 Applications Contactless relay Diving circuit for a solenoid Driving circuit for a motor
2sk3037.pdf
Power F-MOS FETs2SK3037 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.05
2sk3035.pdf
Power F-MOS FETs2SK3035Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteed High-speed switchingunit: mm Low ON-resistance6.50.12.30.1 No secondary breakdown 5.30.14.350.1 Low-voltage drive 0.50.1 High electrostatic breakdown voltage Applications Contactless relay1.00.1 Diving circuit for a solenoid0.10.0520.50.1
2sk3036.pdf
Power F-MOS FETs2SK3036 (Tentative)Silicon N-Channel Power F-MOS FET Features Avalanche energy capacity guaranteedunit: mm High-speed switching6.50.12.30.1 Low ON-resistance 5.30.14.350.10.50.1 No secondary breakdown Low-voltage drive High electrostatic breakdown voltage Applications 1.00.10.10.052 Contactless relay 0.50.11 3 0.750.1 Div
2sk303.pdf
Ordering number:EN856FN-Channel Junction Silicon FET2SK303Low-FrequencyGeneral-Purpose Amplifier ApplicationsFeatures Package Dimensions Ideal for potentiometers, analog switches, lowunit:mmfrequency amplifiers, constant current supplies, and2050Aimpedance conversion.[2SK303]0.40.1630 to 0.11 0.95 20.951.92.91 : Source2 : Drain3 : GateSANYO : CP
2sk3030.pdf
This product complies with the RoHS Directive (EU 2002/95/EC).Power MOSFETs2SK3030Silicon N-channel power MOSFETUnit: mm Features6.50.12.30.1 Avalanche energy capability guaranteed5.30.14.350.1 High-speed switching0.50.1 Low ON resistance Ron No secondary breakdown Low-voltage drive High electrostatic energy capability1.00.10.
2sk303.pdf
UNISONIC TECHNOLOGIES CO., LTD 2SK303 JFET LOW-FREQUENCY GENERAL-PURPOSE AMPLIFIER APPLICATIONS FEATURES * Ideal For Potentiometers * Analog Switches * Low Frequency Amplifiers * Constant Current Supplies * Impedance Conversion ORDERING INFORMATION Ordering Number Pin Assignment Package Packing Lead Free Halogen Free 1 2 3 2SK303L-x-AE3-R 2SK303G-x-AE3-R SOT-23
2sk303-3.pdf
SMD Type Junction FETN-Channel Junction Silicon FET2SK303SOT-23-3Unit: mm+0.22.9-0.1+0.10.4 -0.1Features3Ideal for potentiometers, analog switches, lowfrequency amplifiers, constant current supplies, andimpedance conversion.1 2+0.02+0.10.15 -0.020.95 -0.1+0.11.9-0.21Source1.Base1. Gate2SourceDrain2.Emitter2.3 Gate3. Drain3.collectorA
2sk3031.pdf
SMD Type ICSMD Type MOSFETSilicon N-Channel Power F-MOSFET2SK3031FeaturesTO-252Avalanche energy capacity guaranteedUnit: mm+0.15High-speed switching +0.16.50-0.15 2.30-0.15.30+0.2 0.50+0.8-0.2 -0.7Low ON-resistanceNo secondary breakdownLow-voltage drive0.1270.80+0.1 max-0.1High electrostatic breakdown voltage+0.12.3 0.60-0.1 1Gate4.60+0.15-0.152Dr
2sk3032.pdf
isc N-Channel MOSFET Transistor 2SK3032FEATURESDrain Current : I = 25A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =100m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3034.pdf
isc N-Channel MOSFET Transistor 2SK3034FEATURESDrain Current : I =20A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =35m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3037.pdf
isc N-Channel MOSFET Transistor 2SK3037FEATURESDrain Current : I =10A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =0.25m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3035.pdf
isc N-Channel MOSFET Transistor 2SK3035FEATURESDrain Current : I =3A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =1.1m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3030.pdf
isc N-Channel MOSFET Transistor 2SK3030FEATURESDrain Current : I = 8A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =230m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3031.pdf
isc N-Channel MOSFET Transistor 2SK3031FEATURESDrain Current : I = 15A@ T =25D CDrain Source Voltage: V = 100V(Min)DSSStatic Drain-Source On-Resistance: R =135m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3036.pdf
isc N-Channel MOSFET Transistor 2SK3036FEATURESDrain Current : I =6A@ T =25D CDrain Source Voltage: V = 150V(Min)DSSStatic Drain-Source On-Resistance: R =450m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
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