2SK3055 - описание и поиск аналогов

 ..1. Size:70K  1
 2sk3055.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3055 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3055 Isolated TO-220 FEATURES Low On-State Resistance RDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) (Isolated TO-220)

 ..2. Size:280K  inchange semiconductor
 2sk3055.pdf 

isc N-Channel MOSFET Transistor 2SK3055 FEATURES Drain Current I = 30A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 34m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.1. Size:76K  1
 2sk3058.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3058 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching applications. 2SK3058 TO-220AB 2SK3058-S TO-262 FEATURES Super Low On-State Resistance 2SK3058-ZJ TO-263 RDS(on)1 = 17 m MAX. (VGS = 10

 8.2. Size:179K  toshiba
 2sk3051.pdf 

2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSV) 2SK3051 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 24 m (typ.) High forward transfer admittance Yfs = 27 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 50 V) Enhancement mode Vth = 1.5 3.0 V (VDS = 1

 8.3. Size:603K  renesas
 2sk3053.pdf 

2010 4 1 NEC

 8.4. Size:98K  renesas
 2sk3054c.pdf 

Preliminary Data Sheet 2SK3054C R07DS1285EJ0200 Rev.2.00 N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015 Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10

 8.5. Size:61K  nec
 2sk3057.pdf 

DATA SHEET MOS FIELD EFFECT TRANSISTOR 2SK3057 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect Transistor PART NUMBER PACKAGE designed for high current switching application. 2SK3057 Isolated TO-220 FEATURES Low on-state resistance RDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A) RDS(on)2 = 27 m MA

 8.6. Size:185K  tysemi
 2sk3050.pdf 

SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type SMD Type IC SMD Type IC SMD Type IC SMD Type Transistors Product specification 2SK3050 TO-252 Unit mm Features 6.50+0.15 2.30+0.1 -0.15 -0.1 +0.2 5.30-0.2 0.50+0.8 -0.7 Low on-resistance. Fast switching speed. Wide SOA (safe operating area). 0.127 0.80+0.1 max -0.1 Gate-source voltage (VGSS) gua

 8.7. Size:356K  inchange semiconductor
 2sk3051b.pdf 

isc N-Channel MOSFET Transistor 2SK3051B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =50V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.8. Size:286K  inchange semiconductor
 2sk3050.pdf 

isc N-Channel MOSFET Transistor 2SK3050 FEATURES Drain Current I =2A@ T =25 D C Drain Source Voltage V = 600V(Min) DSS Static Drain-Source On-Resistance R =5.5 (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid dr

 8.9. Size:357K  inchange semiconductor
 2sk3058-zj.pdf 

isc N-Channel MOSFET Transistor 2SK3058-ZJ FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and soleno

 8.10. Size:282K  inchange semiconductor
 2sk3051k.pdf 

isc N-Channel MOSFET Transistor 2SK3051K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V =50V(Min) DSS Static Drain-Source On-Resistance R = 30m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.11. Size:289K  inchange semiconductor
 2sk3058.pdf 

isc N-Channel MOSFET Transistor 2SK3058 FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V =60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid d

 8.12. Size:279K  inchange semiconductor
 2sk3057.pdf 

isc N-Channel MOSFET Transistor 2SK3057 FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

 8.13. Size:283K  inchange semiconductor
 2sk3058-s.pdf 

isc N-Channel MOSFET Transistor 2SK3058-S FEATURES Drain Current I = 55A@ T =25 D C Drain Source Voltage V = 60V(Min) DSS Static Drain-Source On-Resistance R = 17m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoi