2SK3058 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: 2SK3058
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 58 W
Предельно допустимое напряжение сток-исток |Uds|: 60 V
Предельно допустимое напряжение затвор-исток |Ugs|: 20 V
Минимальное напряжение отсечки |Vgs(off)|: 1 V
Максимально допустимый постоянный ток стока |Id|: 55 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 45 nC
Время нарастания (tr): 410 ns
Выходная емкость (Cd): 550 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.017 Ohm
Тип корпуса: TO220AB
2SK3058 Datasheet (PDF)
2sk3058.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3058SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3058 TO-220AB2SK3058-S TO-262FEATURES Super Low On-State Resistance 2SK3058-ZJ TO-263RDS(on)1 = 17 m MAX. (VGS = 10
2sk3058.pdf
isc N-Channel MOSFET Transistor 2SK3058FEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d
2sk3058-zj.pdf
isc N-Channel MOSFET Transistor 2SK3058-ZJFEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno
2sk3058-s.pdf
isc N-Channel MOSFET Transistor 2SK3058-SFEATURESDrain Current : I = 55A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi
2sk3055.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3055SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3055 Isolated TO-220FEATURES Low On-State ResistanceRDS(on)1 = 34 m MAX. (VGS = 10 V, ID = 15 A) (Isolated TO-220)
2sk3051.pdf
2SK3051 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSV) 2SK3051 Chopper Regulator DC-DC Converter, and Motor Drive Unit: mmApplications Low drain-source ON resistance : RDS (ON) = 24 m (typ.) High forward transfer admittance : |Yfs| = 27 S (typ.) Low leakage current : IDSS = 100 A (max) (VDS = 50 V) Enhancement mode : Vth = 1.5~3.0 V (VDS = 1
2sk3054c.pdf
Preliminary Data Sheet 2SK3054C R07DS1285EJ0200Rev.2.00N-CHANNEL MOSFET FOR SWITCHING Jul 16, 2015Description The 2SK3054C, N-channel vertical type MOSFET designed for general-purpose switch, is a device which can be driven directly by a 4.5 V power source. Features Directly driven by a 4.5 V power source. Low on-state resistance RDS(on)1 = 2.7 MAX. (VGS = 10
2sk3057.pdf
DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3057SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION This product is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching application.2SK3057 Isolated TO-220FEATURES Low on-state resistanceRDS(on)1 = 17 m MAX. (VGS = 10 V, ID = 23 A)RDS(on)2 = 27 m MA
2sk3050.pdf
SMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD TypeSMD Type ICSMD Type ICSMD Type ICSMD Type TransistorsProduct specification2SK3050TO-252Unit: mmFeatures6.50+0.15 2.30+0.1-0.15 -0.1+0.25.30-0.2 0.50+0.8-0.7Low on-resistance.Fast switching speed.Wide SOA (safe operating area).0.1270.80+0.1 max-0.1Gate-source voltage (VGSS) gua
2sk3055.pdf
isc N-Channel MOSFET Transistor 2SK3055FEATURESDrain Current : I = 30A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 34m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3051b.pdf
isc N-Channel MOSFET Transistor 2SK3051BFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3050.pdf
isc N-Channel MOSFET Transistor 2SK3050FEATURESDrain Current : I =2A@ T =25D CDrain Source Voltage: V = 600V(Min)DSSStatic Drain-Source On-Resistance: R =5.5(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid dr
2sk3051k.pdf
isc N-Channel MOSFET Transistor 2SK3051KFEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V =50V(Min)DSSStatic Drain-Source On-Resistance: R = 30m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
2sk3057.pdf
isc N-Channel MOSFET Transistor 2SK3057FEATURESDrain Current : I = 45A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 17m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid
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