Справочник MOSFET. 2SK3060-S

 

2SK3060-S MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2SK3060-S

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 70 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Минимальное напряжение отсечки |Vgs(off)|: 1 V

Максимально допустимый постоянный ток стока |Id|: 70 A

Максимальная температура канала (Tj): 150 °C

Общий заряд затвора (Qg): 50 nC

Время нарастания (tr): 600 ns

Выходная емкость (Cd): 700 pf

Сопротивление сток-исток открытого транзистора (Rds): 0.013 Ohm

Тип корпуса: TO262

Аналог (замена) для 2SK3060-S

 

 

2SK3060-S Datasheet (PDF)

..1. 2sk3060-s.pdf Size:283K _inchange_semiconductor

2SK3060-S 2SK3060-S

isc N-Channel MOSFET Transistor 2SK3060-SFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

6.1. 2sk3060-z.pdf Size:357K _inchange_semiconductor

2SK3060-S 2SK3060-S

isc N-Channel MOSFET Transistor 2SK3060-ZFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoi

6.2. 2sk3060-zj.pdf Size:357K _inchange_semiconductor

2SK3060-S 2SK3060-S

isc N-Channel MOSFET Transistor 2SK3060-ZJFEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V = 60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand soleno

 7.1. 2sk3060.pdf Size:81K _1

2SK3060-S 2SK3060-S

DATA SHEETMOS FIELD EFFECT TRANSISTOR2SK3060SWITCHINGN-CHANNEL POWER MOS FETINDUSTRIAL USEDESCRIPTION ORDERING INFORMATION The 2SK3060 is N-Channel MOS Field Effect TransistorPART NUMBER PACKAGEdesigned for high current switching applications.2SK3060 TO-220AB2SK3060-S TO-262FEATURES Low on-state resistance2SK3060-ZJ TO-263RDS(on)1 = 13 m MAX. (VGS = 10 V, ID

7.2. 2sk3060.pdf Size:289K _inchange_semiconductor

2SK3060-S 2SK3060-S

isc N-Channel MOSFET Transistor 2SK3060FEATURESDrain Current : I = 70A@ T =25D CDrain Source Voltage: V =60V(Min)DSSStatic Drain-Source On-Resistance: R = 13m(Max)@ V = 10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solenoid d

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