2SK3090K - описание и поиск аналогов

isc N-Channel MOSFET Transistor 2SK3090K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 16 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =

isc N-Channel MOSFET Transistor 2SK3090B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid

Ordering number EN8622 2SK3093LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3093LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

Ordering number EN8624 2SK3095LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3095LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

Ordering number EN8628 2SK3099LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3099LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source

www.DataSheet.co.kr Ordering number EN8625 2SK3096 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3096 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source

www.DataSheet.co.kr Ordering number EN8623 2SK3094 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3094 Applications Features High-speed switching. Low ON-resistance. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source

Ordering number EN8627 2SK3098 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3098 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V

Ordering number ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2083B [2SK3092] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP Package Dimensions unit mm 2092B [2SK3092] 6.5 2.3 5.0 0.5 4 0.

isc N-Channel MOSFET Transistor 2SK3092D FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3096 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO

isc N-Channel MOSFET Transistor 2SK3094 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3093LS FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3095LS FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3098 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS

isc N-Channel MOSFET Transistor 2SK3099LS FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB

isc N-Channel MOSFET Transistor 2SK3092I FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS