2SK3099LS datasheet, аналоги, основные параметры
Наименование производителя: 2SK3099LS 📄📄
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ - Максимальная рассеиваемая мощность: 35 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 400 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 30 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 9 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ - Время нарастания: 35 ns
Cossⓘ - Выходная емкость: 350 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.55 Ohm
Тип корпуса: TO220F
📄📄 Копировать
Аналог (замена) для 2SK3099LS
- подборⓘ MOSFET транзистора по параметрам
2SK3099LS даташит
..1. Size:31K 1
2sk3099ls.pdf 
Ordering number EN8628 2SK3099LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3099LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
..2. Size:279K inchange semiconductor
2sk3099ls.pdf 
isc N-Channel MOSFET Transistor 2SK3099LS FEATURES Drain Current I = 9A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. AB
8.1. Size:49K 1
2sk3093ls.pdf 
Ordering number EN8622 2SK3093LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3093LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
8.2. Size:49K 1
2sk3095ls.pdf 
Ordering number EN8624 2SK3095LS SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3095LS Applications Features Low ON-resistance. Low Qg. Ultrahigh-Speed Switching Applications. Avalanche resistance guarantee. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source
8.3. Size:209K toshiba
2sk3090.pdf 
2SK3090 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type ( -MOSVI) 2SK3090 Chopper Regulator DC-DC Converter, and Motor Drive Unit mm Applications Low drain-source ON resistance RDS (ON) = 16 m (typ.) High forward transfer admittance Yfs = 26 S (typ.) Low leakage current IDSS = 100 A (max) (VDS = 30 V) Enhancement mode Vth = 1.5 3.0 V (VDS =
8.4. Size:96K sanyo
2sk3096.pdf 
www.DataSheet.co.kr Ordering number EN8625 2SK3096 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3096 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source
8.5. Size:96K sanyo
2sk3094.pdf 
www.DataSheet.co.kr Ordering number EN8623 2SK3094 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3094 Applications Features High-speed switching. Low ON-resistance. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source
8.6. Size:46K sanyo
2sk3098.pdf 
Ordering number EN8627 2SK3098 SANYO Semiconductors DATA SHEET N-Channel Silicon MOSFET General-Purpose Switching Device 2SK3098 Applications Features Low ON-resistance. High-speed switching. 15V drive. Specifications Absolute Maximum Ratings at Ta=25 C Parameter Symbol Conditions Ratings Unit Drain-to-Source Voltage VDSS 400 V Gate-to-Source Voltage VGSS 30 V
8.7. Size:31K sanyo
2sk3092.pdf 
Ordering number ENN6788 2SK3092 N-Channel Silicon MOSFET 2SK3092 Ultrahigh-Speed Switching Applications Features Package Dimensions Low ON-resistance. unit mm Low Qg. 2083B [2SK3092] 6.5 2.3 5.0 0.5 4 0.85 0.7 1.2 0.6 0.5 1 Gate 1 2 3 2 Drain 3 Source 4 Drain 2.3 2.3 SANYO TP Package Dimensions unit mm 2092B [2SK3092] 6.5 2.3 5.0 0.5 4 0.
8.8. Size:286K inchange semiconductor
2sk3092d.pdf 
isc N-Channel MOSFET Transistor 2SK3092D FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.9. Size:289K inchange semiconductor
2sk3096.pdf 
isc N-Channel MOSFET Transistor 2SK3096 FEATURES Drain Current I = 7A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.87 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABSO
8.10. Size:289K inchange semiconductor
2sk3094.pdf 
isc N-Channel MOSFET Transistor 2SK3094 FEATURES Drain Current I = 5.5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.11. Size:283K inchange semiconductor
2sk3090k.pdf 
isc N-Channel MOSFET Transistor 2SK3090K FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
8.12. Size:279K inchange semiconductor
2sk3093ls.pdf 
isc N-Channel MOSFET Transistor 2SK3093LS FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.13. Size:279K inchange semiconductor
2sk3095ls.pdf 
isc N-Channel MOSFET Transistor 2SK3095LS FEATURES Drain Current I = 5A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 1.2 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.14. Size:289K inchange semiconductor
2sk3098.pdf 
isc N-Channel MOSFET Transistor 2SK3098 FEATURES Drain Current I = 12A@ T =25 D C Drain Source Voltage V =400V(Min) DSS Static Drain-Source On-Resistance R = 0.55 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.15. Size:354K inchange semiconductor
2sk3092i.pdf 
isc N-Channel MOSFET Transistor 2SK3092I FEATURES Drain Current I = 3A@ T =25 D C Drain Source Voltage V = 400V(Min) DSS Static Drain-Source On-Resistance R = 2.3 (Max) DS(on) 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid drive. ABS
8.16. Size:357K inchange semiconductor
2sk3090b.pdf 
isc N-Channel MOSFET Transistor 2SK3090B FEATURES Drain Current I = 45A@ T =25 D C Drain Source Voltage V = 30V(Min) DSS Static Drain-Source On-Resistance R = 20m (Max)@ V = 10V DS(on) GS 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation DESCRIPTION motor drive, DC-DC converter, power switch and solenoid
Другие IGBT... 2SK3068B, 2SK3068K, 2SK3089B, 2SK3089K, 2SK3090B, 2SK3090K, 2SK3093LS, 2SK3095LS, RFP50N06, IPB051N08N, NDD04N60Z-1G, 15N10, 15N10B, 3482, 4420, 4803A, 6435
