Справочник MOSFET. IPB051N08N

 

IPB051N08N MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: IPB051N08N

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 300 W

Предельно допустимое напряжение сток-исток |Uds|: 85 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 4 V

Максимально допустимый постоянный ток стока |Id|: 100 A

Максимальная температура канала (Tj): 175 °C

Сопротивление сток-исток открытого транзистора (Rds): 0.0051 Ohm

Тип корпуса: TO263

Аналог (замена) для IPB051N08N

 

 

IPB051N08N Datasheet (PDF)

..1. ipb051n08n.pdf Size:356K _inchange_semiconductor

IPB051N08N
IPB051N08N

isc N-Channel MOSFET Transistor IPB051N08NFEATURESDrain Current : I = 100A@ T =25D CDrain Source Voltage: V = 85V(Min)DSSStatic Drain-Source On-Resistance: R = 5.1m(Max) @V =10VDS(on) GS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationDESCRIPTIONmotor drive, DC-DC converter, power switchand solen

7.1. ipb051ne8n-g ipi05cne8n-g ipp054ne8n-g.pdf Size:503K _infineon

IPB051N08N
IPB051N08N

IPB051NE8N G IPI05CNE8N GIPP054NE8N GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 85 VDS N-channel, normal levelR 5.1mDS(on),max (TO 263) Excellent gate charge x R product (FOM)DS(on)I 100 AD Very low on-resistance RDS(on) 175 C operating temperature Pb-free lead plating; RoHS compliant Qualified according to JEDEC1) for target

9.1. ipp055n03l ipp055n03lg ipb055n03lg.pdf Size:322K _infineon

IPB051N08N
IPB051N08N

Type IPP055N03L GIPB055N03L GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on

9.2. ipb050n06ng ipp050n06ng.pdf Size:731K _infineon

IPB051N08N
IPB051N08N

IPP050N06N G IPB050N06N G Power-TransistorProduct SummaryFeaturesV D O >@ 50AB AE8B278=6 2>=D4@B4@A 0=3 AG=2 @42B85820B8>=R 4 7 m + >= =O ' 270==4; 4=70=24@?4@0B8=6 B4"+ 2>64= 5@44 022>@38=6 B> # Type #)) ' ' #) ' ' Package O O Mar

 9.3. ipb052n04n.pdf Size:441K _infineon

IPB051N08N
IPB051N08N

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9.4. ipp057n08n3g ipi057n08n3g ipb054n08n3g.pdf Size:1022K _infineon

IPB051N08N
IPB051N08N

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 G 3 Power-TransistorProduct SummaryFeaturesV 80 VDSQ ' 381>>5?B=1

 9.5. ipp057n06n3 ipb054n06n3 ipp057n06n3 ipb057n06n3.pdf Size:691K _infineon

IPB051N08N
IPB051N08N

pe IPB054N06N3 G IPP057N06N3 G 3 Power-TransistorProduct SummaryFeaturesV D Q #4513I CG9D389>7 1>4 CI>3 B53 R 4 m , ?> =1H ,& Q ( @D9=9J54 D538>?F5BD5BCI DQ H35>5?B=1

9.6. ipb054n06n3g ipp057n06n3g.pdf Size:689K _infineon

IPB051N08N
IPB051N08N

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9.7. ipp057n08n3-g ipi057n08n3-g ipb054n08n3-g.pdf Size:526K _infineon

IPB051N08N
IPB051N08N

IPP057N08N3 G IPI057N08N3 GIPB054N08N3 GOptiMOS3 Power-TransistorProduct SummaryFeaturesV 80 VDS N-channel, normal levelR 5.4mDS(on),max (SMD) Excellent gate charge x R product (FOM)DS(on)I 80 AD Very low on-resistance RDS(on)previous engineering 175 C operating temperaturesample codes:IPP06CN08N Pb-free lead plating; RoHS complia

9.8. ipb057n06n.pdf Size:570K _infineon

IPB051N08N
IPB051N08N

TypeIPB057N06NOptiMOSTM Power-TransistorProduct Summary FeaturesVDS 60 V Optimized for synchronous rectificationRDS(on),max 5.7 mW 100% avalanche testedID 45 A Superior thermal resistanceQoss 32 nC N-channel, normal levelQg(0V..10V) 27 nC Qualified according to JEDEC1) for target applications Pb-free lead plating; RoHS compliant Haloge

9.9. ipp05cn10n ipp05cn10n ipb05cn10n-g ipi05cn10n-g.pdf Size:781K _infineon

IPB051N08N
IPB051N08N

IPB05CN10N G IPI05CN10N GIPP05CN10N G 2 Power-TransistorProduct SummaryFeaturesV 100 VDSR ( 492??6= ?@C>2= =6G6=R 5.1 m - @? >2I .) R I46==6?E 82E6 492C86 I R AC@5F4E !) ' DS(on)I 100 ADR /6CJ =@H @? C6D:DE2?46 RDS(on)R U @A6C2E:?8 E6>A6C2EFC6R *3 7C66 =625 A=2E:?8 , @#- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ % 7@C E2C86E 2AA=:42E:@?R $562= 7@C 9:89 7

9.10. ipb05n03la.pdf Size:341K _infineon

IPB051N08N
IPB051N08N

IPB05N03LA GOptiMOS2 Power-TransistorProduct SummaryFeaturesV 25 VDS Ideal for high-frequency dc/dc convertersR (SMD version) 4.6mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO263 Superior thermal resistan

9.11. ipb055n03l.pdf Size:727K _infineon

IPB051N08N
IPB051N08N

Type IPP055N03L GIPB055N03L G 3 Power-TransistorProduct SummaryFeaturesV 30 VDS Fast switching MOSFET for SMPSR 5.5mWDS(on),max Optimized technology for DC/DC convertersI 50 AD Qualified according to JEDEC1) for target applications N-channel, logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)

9.12. ipb049n06l3g ipp052n06l3g ipp052n06l3 ipb049n06l3 ipp052n06l3 ipb052n06l3.pdf Size:683K _infineon

IPB051N08N
IPB051N08N

pe IPB049N06L3 G IPP052N06L3 G 3 Power-TransistorProduct SummaryFeaturesV D R #562= 7@C 9:89 7C6BF6?4J DH:E49:?8 2?5 DJ?4 C64 R 4 7 m - @? >2I -' R ) AE:>:K65 E649?@=@8J 7@C 4@?G6CE6CDI DR I46==6?E 82E6 492C86 I R AC@5F4E ) ' D n)R ( 492??6= =@8:4 =6G6=R 2G2=2?496 E6DE65R *3 7C66 A=2E:?8 , @"- 4@>A=:2?E1)R + F2=:7:65 244@C5:?8 E@ $ 7@C E2C86E 2AA=:42E:

9.13. ipb05n03lbg.pdf Size:280K _infineon

IPB051N08N
IPB051N08N

IPB05N03LBOptiMOS2 Power-TransistorProduct SummaryFeaturesV 30 VDS Ideal for high-frequency dc/dc convertersR 5.0mDS(on),max Qualified according to JEDEC1) for target applicationI 80 AD N-channel - Logic level Excellent gate charge x R product (FOM)DS(on) Very low on-resistance RDS(on)PG-TO220-3-1PG-TO263-3 Superior thermal resistan

9.14. ipb054n08n3g.pdf Size:258K _inchange_semiconductor

IPB051N08N
IPB051N08N

Isc N-Channel MOSFET Transistor IPB054N08N3GFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source

9.15. ipb054n06n3.pdf Size:258K _inchange_semiconductor

IPB051N08N
IPB051N08N

Isc N-Channel MOSFET Transistor IPB054N06N3FEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source V

9.16. ipb05cn10n.pdf Size:257K _inchange_semiconductor

IPB051N08N
IPB051N08N

Isc N-Channel MOSFET Transistor IPB05CN10NFEATURESWith To-263(D2PAK) packageLow input capacitance and gate chargeLow gate input resistance100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching applicationsABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Drain-Source Vo

9.17. ipb057n06n.pdf Size:252K _inchange_semiconductor

IPB051N08N
IPB051N08N

INCHANGE Semiconductorisc N-Channel MOSFET Transistor IPB057N06NFEATURESWith TO-263( D2PAK ) packagingHigh speed switchingLow gate input resistanceStandard level gate driveEasy to use100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSPower supplySwitching applicationsABSOLUTE MAXIM

9.18. ipb055n03l.pdf Size:242K _inchange_semiconductor

IPB051N08N
IPB051N08N

isc N-Channel MOSFET Transistor IPB055N03LDESCRIPTIONDrain Current :I = 50A@ T =25D CDrain Source Voltage: V = 30V(Min)DSS100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONS .Designed for high current, high speed switching, switchmode power supplies.ABSOLUTE MAXIMUM RATINGS(T =25)CSY

Другие MOSFET... FMP36-015P , FMP76-01T , GMM3x100-01X1-SMD , FDMS0306AS , GMM3x120-0075X2-SMD , FDMS0300S , GMM3x160-0055X2-SMD , FDMC7200S , IRFZ48N , FDMC7200 , GMM3x60-015X2-SMD , FDMC0310AS , GWM100-0085X1-SL , FDMS3610S , GWM100-0085X1-SMD , FDMS3606S , GWM100-01X1-SL .

 

 
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