SOT23 P-CHANNEL ENHANCEMENT6F ZVP3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 T V I VD DS V D V V T I D T I VG T T V V V 8VSOT23 VABSOLUTE MAXIMUM RATINGS. V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I

SOT23 P-CHANNEL ENHANCEMENT6F ZVP3306FMODE VERTICAL DMOS FETISSUE 3 JANUARY 1996 T V I VD DS V D V V T I D T I VG T T V V V 8VSOT23 VABSOLUTE MAXIMUM RATINGS. V T V IT V VD i V I VD V i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I

ZVP3306FTAwww.VBsemi.twP-Channel 60 V (D-S) MOSFETFEATURESPRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) () VGS(th) (V) ID (mA)Definition TrenchFET Power MOSFET- 60 3 at VGS = - 10 V - 1 to - 3 -500 High-Side Switching Low On-Resistance: 3 Low Threshold: - 2 V (typ.) Fast Swtiching Speed: 20 ns (typ.) Lo

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P-CHANNEL ENHANCEMENTZVP3306AMODE VERTICAL DMOS FETISSUE 2 MARCH 94 T V I VD VGS=D -16V -14V-12VD-10VE-Line-9V-8V TO92 Compatible-7VABSOLUTE MAXIMUM RATINGS.-6V T V IT-5V-4.5VD i V I VD V8 -10 i D i T ID I D i ID V I V V Di i i T i T T T ELECTRICAL CHARACTERISTICS (at Tamb = 25C unless otherwise stated). T I