WSD2050DN. Аналоги и основные параметры
Наименование производителя: WSD2050DN
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 28 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 20 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 12 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 40 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 11 ns
Cossⓘ - Выходная емкость: 185 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.014 Ohm
Тип корпуса: DFN3.3X3.3-8-EP1
Аналог (замена) для WSD2050DN
- подборⓘ MOSFET транзистора по параметрам
WSD2050DN даташит
..1. Size:2838K winsok
wsd2050dn.pdf 

WSD2050DN N-Ch MOSFET General Description Product Summery The WSD2050DN is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 8.2m 20V 40A gate charge for most of the synchronous buck converter applications . Applications The WSD2050DN meet the RoHS and Green Product requirement , 100% EAS Hi
8.1. Size:615K winsok
wsd2054dn22.pdf 

WSD2054DN22 Dual N-Ch MOSFET General Description Product Summery The WSD2054DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 5A 20V 50m gate charge for most of the small power switching and load switch applications. Applications The WSD2054DN22 meet the RoHS and Green Product requirement
9.1. Size:1808K winsok
wsd2018adn22.pdf 

WSD2018ADN22 N-Ch MOSFET General Description Product Summery The WSD2018ADN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 20V 9.5m 11A excellent RDSON and gate charge for most of the small power switching and load switch Applications applications. The WSD2018ADN22 meet the RoHS and High Frequency Point-of-Load S
9.2. Size:1030K winsok
wsd20l120dn56.pdf 

WSD20L120DN56 P-Ch MOSFET General Description Product Summery The WSD20L120DN56 is the highest performance BVDSS RDSON ID trench P-Ch MOSFET with extreme high cell density,which provide excellent RDSON and gate -20V 2.1m -120A charge for most of the synchronous buck converter applications . Applications The WSD20L120DN56 meet the RoHS and High Frequency Point-of-Load Sy
9.3. Size:2643K winsok
wsd2018dn22.pdf 

WSD2018DN22 N-Ch MOSFET General Description Product Summery The WSD2018DN22 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 15m (MAX) 12A gate charge for most of the small power switching and load switch applications. Applications The WSD2018DN22 meet the RoHS and Green Product requirement
9.4. Size:729K winsok
wsd2068.pdf 

WSD2068 Dual N-Ch MOSFET General Description Product Summery The WSD2068 is the highest performance trench RDSON BVDSS ID N-ch MOSFETs with extreme high cell density , 15.5m 7.5A which provide excellent RDSON and gate 20V charge for most of the small power switching and load switch applications. Applications The WSD2068 meet the RoHS and Green Power Management in Noteb
9.5. Size:2053K winsok
wsd2090dn56.pdf 

WSD2090DN56 N-Ch MOSFET General Description Product Summery The WSD2090DN56 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 2.8m 80A gate charge for most of the synchronous buck converter applications . Applications The WSD2090DN56 meet the RoHS and Green Product requirement 100% EAS guar
9.6. Size:624K winsok
wsd20l70dn.pdf 

WSD20L70DN P-Ch MOSFET General Description Product Summery The WSD20L70DN is the highest performance BVDSS RDSON ID trench P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and -20V 6.7m -70A gate charge for most of the synchronous buck converter applications . Applications The WSD20L70DN meet the RoHS and Green Product requirement 100% EAS gu
9.7. Size:789K winsok
wsd20l75dn.pdf 

WSD20L75DN P-Ch MOSFET Product Summery General Description Description The WSD20L75DN uses advanced BVDSS RDSON ID trench technology and design to provide excellent RDS(ON) with low gate charge. It can be -20V 4.8m -75A used in a wide variety of applications. Applications Load switch Features Battery protection High density cell design for ultra low Rdson DFN3X
9.8. Size:1043K winsok
wsd20l50dn.pdf 

WSD20L50DN P-Ch MOSFET General Description Product Summery The WSD20L50DN is the highest performance trench P-ch MOSFETs with extreme high cell BVDSS RDSON ID density , which provide excellent RDSON and -20V 9.0m -50A gate charge for most of the synchronous buck converter applications . Applications The WSD20L50DN meet the RoHS and Green Product requirement 100% EAS
9.9. Size:2306K winsok
wsd2075dn.pdf 

WSD2075DN Dual P-Ch MOSFET Product Summery General Description The WSD2075DN is the highest performance BVDSS RDSON ID trench Dual P-ch MOSFETs with extreme high cell density , which provide excellent RDSON -20V 9.5m -36A and gate charge for most of the synchronous buck converter applications . Applications The WSD2075DN meet the RoHS and Green Product requirement 100%
9.10. Size:1316K winsok
wsd2012dn25.pdf 

WSD2012DN25 N-Ch MOSFET General Description Product Summery The WSD2012DN25 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 9.5m (max) density , which provide excellent RDSON and gate 20V 11A charge for most of the small power switching and load switch applications. Applications The WSD2012DN25 meet the RoHS and Green Power management
9.11. Size:691K winsok
wsd2098.pdf 

WSD2098 Dual N-Ch MOSFET General Description Product Summery The WSD2098 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , 7.0m which provide excellent RDSON and gate charge 20V 9.7A for most of the small power switching and load switch applications. Applications The WSD2098 meet the RoHS and Green Power Management in Notebook
9.12. Size:1786K winsok
wsd2018bdn22.pdf 

WSD2018BDN22 N-Ch MOSFET General Description Product Summery The WSD2018BDN22 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide 12V 11.5m (MAX) 12.3A excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WSD2018BDN22 meet the RoHS and Green Product req
Другие MOSFET... WSD100N06GDN56
, WSD1216DN22
, WSD14N10DNG
, WSD1614DN
, WSD2012DN25
, WSD2018ADN22
, WSD2018BDN22
, WSD2018DN22
, AO4407
, WSD2054DN22
, WSD2068
, WSD2075DN
, WSD2090DN56
, WSD2098
, WSD20L120DN56
, WSD20L50DN
, WSD20L70DN
.