WSD4066DN. Аналоги и основные параметры
Наименование производителя: WSD4066DN
Тип транзистора: MOSFET
Полярность: N
Предельные значения
Pd ⓘ
- Максимальная рассеиваемая мощность: 2.5 W
|Vds|ⓘ - Максимально допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Максимально допустимое напряжение затвор-исток: 20 V
|Id| ⓘ - Максимально допустимый постоянный ток стока: 14 A
Tj ⓘ - Максимальная температура канала: 150 °C
Электрические характеристики
tr ⓘ -
Время нарастания: 6.9 ns
Cossⓘ - Выходная емкость: 95 pf
RDSonⓘ - Сопротивление сток-исток открытого транзистора: 0.017 Ohm
Тип корпуса: DFN3.3X3.3-8-EP
Аналог (замена) для WSD4066DN
- подборⓘ MOSFET транзистора по параметрам
WSD4066DN даташит
..1. Size:1183K winsok
wsd4066dn.pdf 

WSD4066DN Dual N-Ch MOSFET General Description Product Summery The WSD4066DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent 40V 17m 14A RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4066DN meet the RoHS and High Frequency Point-of-Load Synch
8.1. Size:2121K winsok
wsd4062dn56.pdf 

WSD4062DN56 N-Ch MOSFET General Description Product Summery The WSD4062DN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with 40V 7.0m extreme high cell density , which provide 62A excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4062DN56 meet the RoHS and Green Product requirement , 100% EAS
9.1. Size:1896K winsok
wsd4070dn.pdf 

WSD4070DN N-Ch MOSFET General Description Product Summery The WSD4070DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 4.5m 68A provide excellent RDSON and gate charge for most of the synchronous Applications buck converter applications . The WSD4070DN meet the High Frequency Point-of-Load Synchronous RoHS
9.2. Size:1153K winsok
wsd40120dn56.pdf 

WSD40120DN56 N-Ch MOSFET General Description Product Summery The WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120A density , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g
9.3. Size:661K winsok
wsd4098dn56.pdf 

WSD4098DN56 Dual N-Ch MOSFET General Description Product Summery The WSD4098DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 40V 7.8m 22A excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4098DN56 meet the RoHS High Frequency Point-of-Load
9.4. Size:2116K winsok
wsd40p10dn56.pdf 

WSD40P10DN56 P-Ch MOSFET General Description Product Summery The WSD40P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 78m -30A excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD40P10DN56 meet the RoHS and High Frequency Point-of-Load Sy
9.5. Size:2624K winsok
wsd4023dn56.pdf 

WSD4023DN56 N-Ch and P-Channel MOSFET Product Summery General Description The WSD4023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 40V 16m 32A charge for most of the synchronous buck converter -40V 30m -22A applications . The WSD4023DN56 meet the RoHS and Green Product r
9.6. Size:1483K winsok
wsd4038dn.pdf 

WSD4038DN N-Ch MOSFET General Description Product Summery The WSD4038DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 40V 13m 38A excellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4038DN meet the RoHS and High Frequency Point-of-Load Synchronou
9.7. Size:1509K winsok
wsd40n10gdn56.pdf 

WSD40N10GDN56 N-Ch MOSFET General Description Product Summery The WSD40N10GDN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 16m 40A and gate charge for most of the synchronous buck converter applications . Applications The WSD40N10GDN56 meet the RoHS and Green Power Management in TV Co
9.8. Size:2081K winsok
wsd40120dn56g.pdf 

WSD40120DN56G N-Ch MOSFET General Description Product Summery The WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120A low gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S
9.9. Size:1971K winsok
wsd4080dn56.pdf 

WSD4080DN56 N-Channel MOSFET General Description Product Summery The WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A 40V 4.5m charge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E
9.10. Size:1684K winsok
wsd4050dn.pdf 

WSD4050DN N-Ch MOSFET General Description Product Summery The WSD4050DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 7.4m 50A provide excellent RDSON and gate charge for most of the synchronous buck Applications converter applications . The WSD4050DN meet the RoHS High Frequency Point-of-Load Synchronous
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