WSD4070DN MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WSD4070DN
Тип транзистора: MOSFET
Полярность: N
Pdⓘ - Максимальная рассеиваемая мощность: 3.1 W
|Vds|ⓘ - Предельно допустимое напряжение сток-исток: 40 V
|Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
|Vgs(th)|ⓘ - Пороговое напряжение включения: 2.5 V
|Id|ⓘ - Максимально допустимый постоянный ток стока: 25 A
Tjⓘ - Максимальная температура канала: 150 °C
Qgⓘ - Общий заряд затвора: 28 nC
trⓘ - Время нарастания: 3 ns
Cossⓘ - Выходная емкость: 220 pf
Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.0055 Ohm
Тип корпуса: DFN3.3X3.3-EP
WSD4070DN Datasheet (PDF)
wsd4070dn.pdf
WSD4070DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4070DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 4.5m 68Aprovide excellent RDSON and gate charge for most of the synchronous Applications buck converter applications . The WSD4070DN meet the High Frequency Point-of-Load Synchronous RoHS
wsd40120dn56.pdf
WSD40120DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell 40V 1.85m 120Adensity , which provide excellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD40120DN meet the RoHS and Green Product requirement , 100% EAS g
wsd4098dn56.pdf
WSD4098DN56Dual N-Ch MOSFETGeneral Description Product Summery The WSD4098DN56 is the highest BVDSS RDSON ID performance trench Dual N-Ch MOSFET with extreme high cell density,which provide 40V 7.8m 22Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4098DN56 meet the RoHS High Frequency Point-of-Load
wsd40p10dn56.pdf
WSD40P10DN56P-Ch MOSFETGeneral Description Product SummeryThe WSD40P10DN56 is the highest BVDSS RDSON ID performance trench P-ch MOSFET with extreme high cell density , which provide -100V 78m -30Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD40P10DN56 meet the RoHS and High Frequency Point-of-Load Sy
wsd4023dn56.pdf
WSD4023DN56N-Ch and P-Channel MOSFETProduct SummeryGeneral Description The WSD4023DN56 is the highest performance BVDSS RDSON ID trench N-ch and P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 40V 16m 32Acharge for most of the synchronous buck converter -40V 30m -22Aapplications . The WSD4023DN56 meet the RoHS and Green Product r
wsd4038dn.pdf
WSD4038DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4038DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which provide 40V 13m 38Aexcellent RDSON and gate charge for most of the synchronous buck converter Applications applications . The WSD4038DN meet the RoHS and High Frequency Point-of-Load Synchronou
wsd40n10gdn56.pdf
WSD40N10GDN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD40N10GDN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON 100V 16m 40Aand gate charge for most of the synchronous buck converter applications . Applications The WSD40N10GDN56 meet the RoHS and Green Power Management in TV Co
wsd4062dn56.pdf
WSD4062DN56 N-Ch MOSFETGeneral Description Product SummeryThe WSD4062DN56 is the highest BVDSS RDSON ID performance trench N-Ch MOSFET with 40V 7.0mextreme high cell density , which provide 62Aexcellent RDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4062DN56 meet the RoHS and Green Product requirement , 100% EAS
wsd4066dn.pdf
WSD4066DNDual N-Ch MOSFETGeneral Description Product Summery The WSD4066DN is the highest performance BVDSS RDSON ID trench Dual N-Ch MOSFET with extreme high cell density,which provide excellent 40V 17m 14ARDSON and gate charge for most of the synchronous buck converter applications . Applications The WSD4066DN meet the RoHS and High Frequency Point-of-Load Synch
wsd40120dn56g.pdf
WSD40120DN56G N-Ch MOSFETGeneral Description Product SummeryThe WSD40120DN use advanced SGT BVDSS RDSON ID MOSFET technology to provide low RDS(ON), 40V 1.8m 120Alow gate charge, fast switching and excellent avalanche characteristics. This device is specially designed to get better Applications ruggedness and suitable to use in Consumer electronic power supply S
wsd4080dn56.pdf
WSD4080DN56N-Channel MOSFETGeneral Description Product SummeryThe WSD4080DN56 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate 85A40V 4.5mcharge for most of the synchronous buck converter applications . The WSD4080DN56 meet the RoHS and Green Applications Product requirement 100% E
wsd4050dn.pdf
WSD4050DN N-Ch MOSFETGeneral Description Product SummeryThe WSD4050DN is the highest BVDSS RDSON ID performance trench N-ch MOSFETs with extreme high cell density , which 40V 7.4m 50Aprovide excellent RDSON and gate charge for most of the synchronous buck Applications converter applications . The WSD4050DN meet the RoHS High Frequency Point-of-Load Synchronous
Другие MOSFET... IRFP360LC , IRFP3710 , IRFP430 , IRFP431 , IRFP432 , IRFP433 , IRFP440 , IRFP440A , IRFP250 , IRFP442 , IRFP443 , IRFP448 , IRFP450 , IRFP450A , IRFP450FI , IRFP450LC , IRFP451 .
Список транзисторов
Обновления
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