WSF15N10A N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10A uses advanced trench technology and BVDSS RDSON ID design to provide excellent R with low gate charge. It DS(ON) can be used in a wide variety of applications. 100V 90m 15AFeatures High density cell design for ultra low Rdson Fully characterized avalanche voltage and currentTO-252 Pin Configu

WSF15N10G N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10G uses advanced SGTMOS BVDSS RDSON ID technology to provide low RDS(ON), low gate charge, fast switching and excellent avalanche 75m 15A100Vcharacteristics. This device is specially designed to get better ruggedness and suitable to use in Applications Synchronous rectification applications Fast Swi

WSF15N10 N-Ch MOSFETProduct SummeryGeneral Description The WSF15N10 is the highest performance trench BVDSS RDSON ID N-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 100V 80m 15Afor most of the synchronous buck converter applications . Applications The WSF15N10 meet the RoHS and Green High Frequency Point-of-Load Synchronous

WSF15P10P-Ch MOSFETGeneral Description Product SummeryThe WSF15P10 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -100V 150m -13Afor most of the synchronous buck converter applications . Applications The WSF15P10 meet the RoHS and Green High Frequency Point-of-Load Synchrono