Справочник MOSFET. 2N7002T

 

2N7002T MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник

Наименование прибора: 2N7002T

Маркировка: 72_702T_K72

Тип транзистора: MOSFET

Полярность: N

Максимальная рассеиваемая мощность (Pd): 0.2 W

Предельно допустимое напряжение сток-исток |Uds|: 60 V

Предельно допустимое напряжение затвор-исток |Ugs|: 20 V

Пороговое напряжение включения |Ugs(th)|: 2 V

Максимально допустимый постоянный ток стока |Id|: 0.115 A

Максимальная температура канала (Tj): 150 °C

Сопротивление сток-исток открытого транзистора (Rds): 7.5 Ohm

Тип корпуса: SOT523F

Аналог (замена) для 2N7002T

 

 

2N7002T Datasheet (PDF)

0.1. 2n7002t.pdf Size:332K _fairchild_semi

2N7002T
2N7002T

October 20072N7002TN-Channel Enhancement Mode Field Effect TransistorFeatures Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS CompliantDSGSOT - 523FMarking : AAAbsolute Maximum Ratings * Ta = 25C unless otherwise notedSymbol P

0.2. 2n7002t.pdf Size:77K _diodes

2N7002T
2N7002T

2N7002TN-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case: SOT523 Low Gate Threshold Voltage Case Material: Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity: Level 1 per J-STD-020D Fast Switching Speed Terminals: Sol

 0.3. 2n7002t.pdf Size:173K _utc

2N7002T
2N7002T

UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON)* Voltage Contr

0.4. 2n7002t.pdf Size:283K _secos

2N7002T
2N7002T

2N7002T 0.115A , 60V , RDS(ON) 7.2 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). A Voltage controlled small signal switch. M Rugged and reliable. 33 High saturation current capability. Top View C B11 2

 0.5. 2n7002t.pdf Size:2511K _jiangsu

2N7002T
2N7002T

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-523 5@10V60V115mA 1. GATE 7@5V2. SOURCE 3. DRAIN APPLICATIONFEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch

0.6. 2n7002t.pdf Size:287K _wietron

2N7002T
2N7002T

2N7002TN-Channel ENHANCEMENT MODEPOWER MOSFET31. GATE1P b Lead(Pb)-Free22. SOURCE3. DRAIN SOT-523(SC-75)FEATURES:* Fast Switching Speed* Low On-Resistance* Low Voltage DriverAPPLICATIONS:* Drivers: Relays, Solenoids, Lamps, Hammers,Displays, Memories* Battery Operated Systems* Power Supply Converter Circuits* Load/Power Switching Cell Phones, PagersMaximu

0.7. 2n7002t.pdf Size:412K _willas

2N7002T
2N7002T

FM120-M WILLASTHRU2N7002TSOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProductPackage outlineFeatures Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123HMOSFET (N-Channel) nted application in order to Low prof

0.8. 2n7002te.pdf Size:398K _kexin

2N7002T

SMD Type MOSFETN-Channel MOSFET2N7002TESOT-523 Unit:mm+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 0.29 A3 RDS(ON) 2 (VGS = 20V) 0.30.05+0.10.5 -0.1 RDS(ON) 7.5 (VGS = 5V)1. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

0.9. 2n7002t.pdf Size:1085K _kexin

2N7002T
2N7002T

SMD Type MOSFETN-Channel MOSFET2N7002TSOT-523 U nit: m m+0.11.6 -0.1+0.11.0 -0.1+0.050.2 -0.05 0.150.052 1 Features VDS (V) = 60V ID = 115mA3 RDS(ON) 5 (VGS = 10V)0.30.05 RDS(ON) 7 (VGS = 5V)+0.10.5-0.11. Gate2. Source3. Drain Absolute Maximum Ratings Ta = 25Parameter Symbol Rating Unit Drain-Source

0.10. 2n7002tb.pdf Size:189K _panjit

2N7002T
2N7002T

2N7002TB60V N-CHANNEL ENHANCEMENT MODE MOSFETUnitinch(mm)SOT-523FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@50mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers : Relays, Displays, Lamps, Solenoids, Memories, etc.0.

0.11. 2n7002tgp.pdf Size:124K _chenmko

2N7002T
2N7002T

CHENMKO ENTERPRISE CO.,LTD2N7002TGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.SC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing den

0.12. 2n7002tesgp.pdf Size:295K _chenmko

2N7002T
2N7002T

CHENMKO ENTERPRISE CO.,LTD2N7002TESGPSURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpereAPPLICATION* Relay driver* High speed line driver* Logic level transistorSC-75/SOT-416FEATURE* Small surface mounting type. (SC-75/SOT-416)* High density cell design for low RDS(ON). * Suitable for high packing density.0.10.20.

0.13. 2n7002ta 2n7002tc.pdf Size:145K _zetex

2N7002T
2N7002T

2N700260V SOT23 N-channel enhancement mode MOSFET SummaryV(BR)DSS RDS(on) ( )ID (A)7.5 @ VGS= 10V 0.5607.5 @ VGS= 5V 0.05DescriptionA small signal MOSFET for general purpose switching applications.FeaturesD Fast switching speed Low gate drive capability SOT23 packageGApplicationsS General switching applicationsOrdering informationSDevice Reel

0.14. 2n7002t.pdf Size:1628K _anbon

2N7002T
2N7002T

2N7002TN-Channel MOSFETSOT-523 Plastic-Encapsulate MOSFETSID V(BR)DSS RDS(on)MAX SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATIONFEATURE High density cell design for low RDS(ON) Voltage controlled

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