2N7002T - описание и поиск аналогов

October 2007 2N7002T N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT - 523F Marking AA Absolute Maximum Ratings * Ta = 25 C unless otherwise noted Symbol P

2N7002T N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Low On-Resistance Case SOT523 Low Gate Threshold Voltage Case Material Molded Plastic. Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Level 1 per J-STD-020D Fast Switching Speed Terminals Sol

Features Maximum Ratings

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

UNISONIC TECHNOLOGIES CO., LTD 2N7002T Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002T uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Voltage Contr

2N7002T 0.115A , 60V , RDS(ON) 7.2 N-Channel Enhancement MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free SOT-523 FEATURES High density cell design for low RDS(ON). A Voltage controlled small signal switch. M Rugged and reliable. 3 3 High saturation current capability. Top View C B 1 1 2

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-523 Plastic-Encapsulate MOSFETS 2N7002T MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-523 5 @10V 60V 115mA 1. GATE 7 @5V 2. SOURCE 3. DRAIN APPLICATION FEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small signal switch

2N7002T N-Channel ENHANCEMENT MODE POWER MOSFET 3 1. GATE 1 P b Lead(Pb)-Free 2 2. SOURCE 3. DRAIN SOT-523(SC-75) FEATURES * Fast Switching Speed * Low On-Resistance * Low Voltage Driver APPLICATIONS * Drivers Relays, Solenoids, Lamps, Hammers,Displays, Memories * Battery Operated Systems * Power Supply Converter Circuits * Load/Power Switching Cell Phones, Pagers Maximu

FM120-M WILLAS THRU 2N7002T SOT-523 Plastic-Encapsulate MOSFETS FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Ba tch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H MOSFET (N-Channel) nted application in order to Low prof

SMD Type MOSFET N-Channel MOSFET 2N7002T SOT-523 U nit m m +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features VDS (V) = 60V ID = 115mA 3 RDS(ON) 5 (VGS = 10V) 0.3 0.05 RDS(ON) 7 (VGS = 5V) +0.1 0.5-0.1 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

2N7002T N-Channel MOSFET SOT-523 Plastic-Encapsulate MOSFETS ID V(BR)DSS RDS(on)MAX SOT-523 1. GATE 2. SOURCE 3. DRAIN APPLICATION FEATURE High density cell design for low RDS(ON) Voltage controlled

TAK CHEONG SEMICONDUCTOR 150mW SOT-523 SURFACE MOUNT Plastic Package Green Product N-Channel MOSFET 3 Absolute Maximum Ratings TA = 25 C unless otherwise noted Symbol Parameter Value Units 2 VDS Drain-Source Voltage 60 V 1. Gate VGS Continuous Gate-Source Voltage 20V V 2. Source 1 3. Drain ID Continuous Drain Current 115 mA SOT-523 PD Power Dissipation 1

2N7002T www.VBsemi.tw N-Channel 60-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (mA) Definition 2.8 at VGS = 10 V 60 250 Low Threshold 2 V (typ.) Low Input Capacitance 25 pF Fast Switching Speed 25 ns Low Input and Output Leakage SOT-23 TrenchFET Power MOSFET 1200V ESD Protection G 1

SMD Type MOSFET N-Channel MOSFET 2N7002TE SOT-523 Unit mm +0. 1 1.6 -0. 1 +0.1 1.0 -0.1 +0.05 0.2 -0.05 0.15 0.05 2 1 Features VDS (V) = 60V ID = 0.29 A 3 RDS(ON) 2 (VGS = 20V) 0.3 0.05 +0.1 0.5 -0.1 RDS(ON) 7.5 (VGS = 5V) 1. Gate 2. Source 3. Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source

2N7002TB 60V N-CHANNEL ENHANCEMENT MODE MOSFET Unit inch(mm) SOT-523 FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@50mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, Lamps, Solenoids, Memories, etc. 0.

CHENMKO ENTERPRISE CO.,LTD 2N7002TESGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 115 mAmpere APPLICATION * Relay driver * High speed line driver * Logic level transistor SC-75/SOT-416 FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing density. 0.1 0.2 0.

CHENMKO ENTERPRISE CO.,LTD 2N7002TGP SURFACE MOUNT N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CURRENT 0.250 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SC-75/SOT-416 FEATURE * Small surface mounting type. (SC-75/SOT-416) * High density cell design for low RDS(ON). * Suitable for high packing den

2N7002 60V SOT23 N-channel enhancement mode MOSFET Summary V(BR)DSS RDS(on) ( )ID (A) 7.5 @ VGS= 10V 0.5 60 7.5 @ VGS= 5V 0.05 Description A small signal MOSFET for general purpose switching applications. Features D Fast switching speed Low gate drive capability SOT23 package G Applications S General switching applications Ordering information S Device Reel