2N7002V - описание и поиск аналогов

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-563 6 2.5 @10V 5 60V 4 115mA 3 @5V 1 2 3 FEATURE APPLICATION Dual N-channel MOSFET Load Switch for Portable Devices DC/DC Converter Low on-resistance Low gate threshold voltage Low input capacitance

April 2010 2N7002V/VA N-Channel Enhancement Mode Field Effect Transistor Features Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant (Pin4) SOT-563F Marking AB Marking AC * Pin1 and Pin4 are ex

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case SOT-563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020C Low Input Capacitance T

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case SOT563 Low On-Resistance Case Material Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity Level 1 per J-STD-020 Low Input Capacitance Terminal Connection

CHENMKO ENTERPRISE CO.,LTD 2N7002VGP SURFACE MOUNT Dual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. FEATURE SOT-563 * Small surface mounting type. (SOT-563) * High density cell design for low RDS(ON) * Suitable for high packing density. (1) (S1) (D1)(6) * Rug