JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD SOT-563 Plastic-Encapsulate MOSFETS 2N7002V MOSFET (N-Channel)ID V(BR)DSS RDS(on)MAX SOT-563 62.5@10V560V4115mA3@5V123FEATURE APPLICATION Dual N-channel MOSFET Load Switch for Portable Devices DC/DC Converter Low on-resistance Low gate threshold voltage Low input capacitance

April 20102N7002V/VAN-Channel Enhancement Mode Field Effect TransistorFeatures Dual N-Channel MOSFET Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free By Design/RoHS Compliant(Pin4)SOT-563FMarking : AB Marking : AC* Pin1 and Pin4 are ex

2N7002VC/VACDUAL N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Features Mechanical Data Dual N-Channel MOSFET Case: SOT-563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020C Low Input Capacitance T

2N7002VC/VAC DUAL N-CHANNEL ENHANCEMENT MODE MOSFET Features Mechanical Data Dual N-Channel MOSFET Case: SOT563 Low On-Resistance Case Material: Molded Plastic, Green Molding Compound. UL Flammability Classification Rating 94V-0 Low Gate Threshold Voltage Moisture Sensitivity: Level 1 per J-STD-020 Low Input Capacitance Terminal Connection

CHENMKO ENTERPRISE CO.,LTD2N7002VGPSURFACE MOUNTDual N-Channel Enhancement MOS FET VOLTAGE 60 Volts CURRENT 0.280 AmpereAPPLICATION* Servo motor control. * Power MOSFET gate drivers.* Other switching applications.FEATURESOT-563* Small surface mounting type. (SOT-563)* High density cell design for low RDS(ON)* Suitable for high packing density.(1)(S1) (D1)(6)* Rug