2N7002W - описание и поиск аналогов

February 2010 2N7002W N-Channel Enhancement Mode Field Effect Transistor Features Low On-Resistance Low Gate Threshold Voltage Low Input Capacitance Fast Switching Speed Low Input/Output Leakage Ultra-Small Surface Mount Package Lead Free/RoHS Compliant D S G SOT-323 Marking 2N Absolute Maximum Ratings * TA = 25 C unless otherwise noted Symbol Par

2N7002W N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR Please click here to visit our online spice models database. Features Mechanical Data Low-On Resistance Case SOT-323 Low Gate Threshold Voltage Case Material Molded Plastic, "Green" Molding Compound, Note 4. UL Flammability Classification Rating 94V-0 Low Input Capacitance Moisture Sensitivity Le

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

2N7002W, 2V7002W Small Signal MOSFET 60 V, 340 mA, Single, N-Channel, SC-70 Features ESD Protected Low RDS(on) www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and (Note 1) PPAP Capable 1.6 W @ 10 V These Devi

2N7002W, 2V7002W Small Signal MOSFET 60 V, 340 mA, Single, N-Channel, SC-70 Features ESD Protected Low RDS(on) www.onsemi.com Small Footprint Surface Mount Package 2V Prefix for Automotive and Other Applications Requiring Unique V(BR)DSS RDS(on) MAX ID MAX Site and Control Change Requirements; AEC-Q101 Qualified and (Note 1) PPAP Capable 1.6 W @ 10 V These Devi

UNISONIC TECHNOLOGIES CO., LTD 2N7002W Preliminary Power MOSFET 300mA, 60V N-CHANNEL POWER MOSFET DESCRIPTION The UTC 2N7002W uses advanced technology to provide excellent RDS(ON), low gate charge and operation with low gate voltages. This device is suitable for use as a load switch or in PWM applications. FEATURES * High Density Cell Design for Low R . DS(ON) * Volta

2 JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-323 Plastic-Encapsulate MOSFETS 2N7002W MOSFET (N-Channel) ID V(BR)DSS RDS(on)MAX SOT-323 5 @10V 3 60V 115mA 7 @5V 1. GATE 2. SOURCE 3. DRAIN 1 2 APPLICATION FEATURE Load Switch for Portable Devices High density cell design for low RDS(ON) DC/DC Converter Voltage controlled small sig

2N7002W Mosfet(N-Channel) SOT-323 1. GATE 2. SOURCE 3. DRAIN Features High density cell design for low RDS(ON) Voltage controlled small signal switch Rugged and reliable High saturation current capability Marking K72 Dimensions in inches and (millimeters) MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VDS Drain-Source voltage 60 V

2N7002W N-Channel MOSFET 3 DRAIN 3 Features 1 1 2 *Low On-Resistance 7.5 GATE *Low Input Capacitance 22PF SOT-323(SC-70) *Low Output Capacitance 11PF 2 *Low Threshold Voltage 1 .5V(TYE) SOURCE *Fast Switching Speed 7ns Maximum Ratings (TA=25 C Unless Otherwise Specified) Rating Symbol Value Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 V Conti

SMD Type MOSFET N-Channel MOSFET 2N7002W Features VDS (V) = 60V ID = 0.34 A (VGS = 10V) RDS(ON) 1.6 (VGS = 10V) RDS(ON) 2.5 (VGS = 4.5V) ESD Protected 1 Gate 2 Source 3 Drain Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Drain-Source Voltage VDS 60 V Gate-Source Voltage VGS 20 Ta=25 310 Continuous Drain C

2N7002W 60V N-Channel Enhancement Mode MOSFET FEATURES RDS(ON), VGS@10V,IDS@500mA=5 RDS(ON), VGS@4.5V,IDS@75mA=7.5 Advanced Trench Process Technology High Density Cell Design For Ultra Low On-Resistance Specially Designed for Battery Operated Systems, Solid-State Relays Drivers Relays, Displays, Lamps, Solenoids, Memories, etc. In compliance with EU RoH

MCC TM Micro Commercial Components 20736 Marilla Street Chatsworth 2N7002W Micro Commercial Components CA 91311 Phone (818) 701-4933 Fax (818) 701-4939 Features Low ON-Resistance N-Channel Low Input Capacitance Low Gate Threshold Voltage Enhancement Mode Fast Switching Speed Field Effect Transistor Low Input/Output Leakage Epoxy meets UL 94 V-0 flamma

S2N7002W 115 mA, 60 V, RDS(ON) = 7.5 N-Ch Small Signal MOSFET Elektronische Bauelemente RoHS Compliant Product A suffix of -C specifies halogen & lead-free FEATURES SOT-323 Low on-resistance Low gate threshold voltage Low input capacitance Fast switching speed Low input/output leakage Ultra-small surface mount package A L 3 3 Top

FM120-M WILLAS THRU 2N7002WT1 115 mA, 60 V Small Signal MOSFET FM1200-M 1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200V SOD-123 PACKAGE Pb Free Product Package outline Features Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance. SOD-123H Low profile surface mounted application in order to N Ch

LESHAN RADIO COMPANY, LTD. Small Signal MOSFET 115 mA, 60 V L2N7002WT1G N Channel SOT 323 3 We declare that the material of product compliance with RoHS requirements. 1 ESD Protected 1000V 2 MAXIMUM RATINGS SOT 323 (SC-70) Rating Symbol Value Unit Drain Source Voltage VDSS 60 Vdc Drain Gate Voltage (RGS = 1.0 M ) VDGR 60 Vdc Drain Current ID 115 mAdc Sim

AiT Semiconductor Inc. AM2N7002W www.ait-ic.com N-CHANNEL MOSFET SMALL SIGNAL MOSFET 115mA, 60 VOLTS DESCRIPTION FEATURES Available in SOT-323 package. ESD Protected 1000V Available in SOT-323 package ORDERING INFORMATION N CHANNEL MOSFET Package Type Part Number SOT-323 AM2N702WC3R C3 (SC70-3) AM2N702WC3VR V Halogen free Package Note R Tape & Reel SPQ 3,0

CMT2N7002 SMALL SIGNAL MOSFET GENERAL DESCRIPTION FEATURES This N-Channel enhancement mode field effect transistor is High Density Cell Design for Low RDS(ON) produced using high cell density, DMOS technology. These Voltage Controlled Small Signal Switch products have been designed to minimize on-state resistance Rugged and Reliable while provide rugged, reliable, and fast swi

2N7002WSK N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR FEATURES LOW ON-RESISTANCE FAST SWITCHING SPEED LOW VOLTAGE DRIVE ESD PROTECTED GATE PORTABLE APPLICATIONS SUCH AS CELL PHONES, MEDIA PLAYERS, DIGITAL CAMERAS, PDA S , VIDEO GAMES, HAND HELD COMPUTERS, ETC. MECHANICAL DATA Pb-Free PACKAGE IS AVAILABLE. Pb Free 2N7002WSK H