WST2088 MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник
Наименование прибора: WST2088
Тип транзистора: MOSFET
Полярность: N
Максимальная рассеиваемая мощность (Pd): 1.5 W
Предельно допустимое напряжение сток-исток |Uds|: 20 V
Предельно допустимое напряжение затвор-исток |Ugs|: 12 V
Пороговое напряжение включения |Ugs(th)|: 1.3 V
Максимально допустимый постоянный ток стока |Id|: 8.8 A
Максимальная температура канала (Tj): 150 °C
Общий заряд затвора (Qg): 16 nC
Время нарастания (tr): 13 ns
Выходная емкость (Cd): 170 pf
Сопротивление сток-исток открытого транзистора (Rds): 0.013 Ohm
Тип корпуса: SOT23
WST2088 Datasheet (PDF)
wst2088.pdf
WST2088N-Ch MOSFETGeneral Description Product SummeryThe WST2088 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate 20V 8m 8.8Acharge for most of the small power switching and load switch applications. Applications The WST2088 meet the RoHS and Green Power switching applicationPro
wst2088a.pdf
WST2088AN-Ch MOSFETGeneral Description Product SummeryThe WST2088A is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and 20V 10.7m 7.5Agate charge for most of the small power switching and load switch applications. Applications The WST2088A meet the RoHS and Power switching applicationGre
wst2078.pdf
WST2078N&P-Ch MOSFETGeneral Description Product SummeryThe WST2078 is the highest performance trench BVDSS RDSON ID N-ch and P-ch MOSFETs with extreme high cell 20V 30m 5.6Adensity , which provide excellent RDSON and gate charge for most of the small power switching and -20V 65m -4.5Aload switch applications. The WST2078 meet the RoHS and Green Product Applications
wst2026.pdf
WST2026N-Channel MOSFETGeneral Description Product SummeryThe WST2026 is the highest performance BVDSS RDSON ID trench N-ch MOSFET with extreme high cell density , which provide excellent RDSON and 20V 65m 2.0Agate charge for most of the small power switching and load switch applications. Applications The WST2026 meet the RoHS and Green Product requirement with full
wst2011.pdf
WST2011 Dual P-Ch MOSFETGeneral Description Product SummeryThe WST2011 is the highest performance trench BVDSS RDSON ID P-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate -3.2A-20V 80mcharge for most of the small power switching and load switch applications. Applications The WST2011 meet the RoHS and Green Product requirement with f
wst2004.pdf
WST2004 N-Ch MOSFETFeatures Product SummeryRDSON (TYP.)BVDSS ID (MAX) Lead Free Product is Acquired 20V 240m Surface Mount Package 20V 280m N-Channel Switch with Low RDS(on) 0.6A Operated at Low Logic Level Gate Drive 20V 410m20V 450mSOT-723 Pin Configuration Applications DD33 Load/Power Switching Interfacing Switching Battery M
wst2005.pdf
WST2005 P-Ch MOSFETGeneral Description Product SummeryThe H is P-Channel enhancement mode power BVDSS RDSON ID MOSFET which is produced with high cell density and DMOS trench technology .This -20V 155m -1.6Adevice particularly suits low voltage applications, especially for battery powered circuits, the tiny and thin outline saves PCB Applications consumption. are electr
wst2066.pdf
WST2066Dual N-Ch MOSFETGeneral Description Product SummeryThe WST2066 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high cell 7.2A20V 16mdensity , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST2066 meet the RoHS and Green Product requirement with full
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