WST3416N-Ch MOSFETGeneral Description Product SummeryThe WST3416 uses advanced trench technology BVDSS RDSON ID to provi de excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.1V. 6.5A20V 18mThis device is suitable for use as a load switch or in PWM applications. It is ESD protected.Applications High Frequency Point-of-Load Synchronous

WST3415P-Ch MOSFETGeneral Description Product SummeryThe WST3415 is the highest performance trench BVDSS RDSON ID P-ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge -20V 44m -5.5Afor most of the small power switching and load switch applications. Applications The WST3415 meet the RoHS and Green Product requirement , with full

WST3415AP-Ch MOSFETGeneral Description Product SummeryThe WST3415A is the highest performance BVDSS RDSON ID trench P-ch MOSFET with extreme high cell density , which provide excellent RDSON and -20V 58m -5.3Agate charge for most of the small power switching and load switch applications. Applications The WST3415A meet the RoHS and Green Product requirement , with fu

WST3414N-Ch MOSFETGeneral Description Product SummeryThe WST3414 is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 20V 24m 6.0Afor most of the small power switching and load switch applications. Applications The WST3414 meet the RoHS and Green Product requirement with full funct