WST6003 P-Ch MOSFETProduct SummeryFeatures D TrenchFETr Power MOSFET: 1.8-V RatedBVDSS RDSON ID D Gate-Source ESD Protected: 2000 VD High-Side Switching-20V 1200m -0.35AD Low On-Resistance: 1.2 WD Low Threshold: 0.8 V (typ)D Fast Switching Speed: 14 nsApplications D S- Prefix for Automotive and Other Applications RequiringUnique Site and Control Change Requirement

WST6002 N-Ch MOSFETGeneral Description Product SummeryThe WST6002 is the highest performance trench BVDSS RDSON ID N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and gate charge 30V 5 100mAfor most of the small power switching and load switch applications. Applications The WST6002 meet the RoHS and Green Product requirement with full func

WST6008 N-Ch MOSFETGeneral Description Product SummeryThe WST6008 is the highest performance BVDSS RDSON ID trench N-Ch MOSFET with extreme high cell density , which provide excellent RDSON and 30V 140m 154mAgate charge for most of the small power switching and load switch applications. Applications The WST6008 meet the RoHS and Green Product requirement with full

WST6045N-Ch MOSFETGeneral Description Product SummeryThe WST6045 is the highest performance BVDSS RDSON ID trench N-ch MOSFETs with extreme high 5.0A60V 40mcell density , which provide excellent RDSON and gate charge for most of the small power switching and load switch applications. Applications The WST6045 meet the RoHS and Green Product requirement with full func

WST6066AN-Ch MOSFETGeneral Description Product SummeryThe WST6066A is the highest performance trench BVDSS RDSON ID N-ch MOSFETs with extreme high cell density , which provide excellent RDSON and gate charge 110m 60V 2.1A for most of the synchronous buck converter applications . Applications The WST6066A meet the RoHS and Green Product requirement , 100% EAS guarante