WNM2016A - аналоги, параметры транзистора - Справочник транзисторов

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WNM2016A WNM2016A Single N-Channel, 20V, 4.7A, Power MOSFET Http //www.sh-willsemi.com V (V) Typical R (m ) DS DS(on) 33@ V =4.5V GS 39@ V =3.1V GS 20 44@ V =2.5V GS 66@ V =1.8V GS SOT-23 Description D 3 The WNM2016A is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent R DS(ON) with low gate cha

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WNM2016 WNM2016 Http //www.sh-willsemi.com N-Channel, 20V, 3.2A, Power MOSFET VDS (V) Typical RDS(on) (m ) D 40 @ VGS=4.5V S 20 47 @ VGS=2.5V 55 @ VGS=1.8V G SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable

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Product specification WNM2016 N-Channel, 20V, 3.2A, Power MOSFET V(BR)DSS Rds(on) 40 @ 4.5V 20 47 @ 2.5V 55 @ 1.8V SOT-23 D Descriptions 3 The WNM2016 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device is suitable for use in DC-DC 2 1 conversion and power swit

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WNM2016-3 www.VBsemi.tw N-Channel 20 V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( ) ID (A)e Qg (Typ.) Definition 0.028 at VGS = 4.5 V TrenchFET Power MOSFET 6a 100 % Rg Tested 20 0.042 at VGS = 2.5 V 6a 8.8 nC Compliant to RoHS Directive 2002/95/EC 0.050 at VGS = 1.8 V 5.6 APPLICATIONS DC/DC

Другие MOSFET... WST6401 , WST6402 , WST8205 , WST8205A , WSTBSS123 , WSTBSS138 , WCM2079 , WNM01N10 , 2N7000 , WNM2046C , WNM2077 , WNM3018 , WNM3025 , WNM6002 , WNM7002 , WNMD2167 , WPM2081 .