WNMD2167 - описание и поиск аналогов

WNMD2167 WNMD2167 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Typical Rds(on) ( ) 0.016@ V =4.5V GS 0.0175@ V =3.8V GS 20 0.018@ VGS=3.1V 0.020@ V =2.5V GS SOT-23-6L Descriptions G1 D1/D2 G2 5 4 6 The WNMD2167 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON

WNMD2166 WNMD2166 Dual N-Channel, 20V, 4.0A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ V =4.5V GS 0.023@ V =3.7V GS 20 0.024@ VGS=3.1V 0.027@ V =2.5V GS Package Descriptions G1 D1/D2 G2 6 5 4 The WNMD2166 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate

WNMD2168 WNMD2168 Dual N-Channel, 20V, 4.1A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.022@ VGS=4.5V 20 0.024@ VGS=3.1V 0.027@ VGS=2.5V Descriptions TSSOP-8L D1/D2 S2 S2 G2 8 7 6 5 The WNMD2168 is N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to provide excellent RDS (ON) with low gate charge. This device

WNMD2165 WNMD2165 Dual N-Channel, 60V, 0.32A, Power MOSFET Http// www.sh-willsemi.com VDS (V) Rds(on) ( ) 1.4@ VGS=10V 60 1.7@ VGS=4.5V ESD Rating 2000V HBM Descriptions SOT-363 The WNMD2165 is Dual N-Channel enhancem -ent MOS Field Effect Transistor. Uses advanced D1 G2 S2 trench technology and design to provide excellent 6 5 4 RDS (ON) with low gate charge. This

WNMD2162 WNMD2162 Dual N-Channel, 20V, 4.8A, Power MOSFET Http //www.sh-willsemi.com VDS (V) Typical RDS(on) (m ) 14 @ VGS= 4.5V 14.5 @ VGS= 3.8V 20 15 @ VGS= 3.1V 16 @ VGS= 2.5V PDFN2.9 2.8-8L ESD protected D2 D1 D1 D2 Descriptions 5 8 7 6 The WNMD2162 is Dual N-Channel enhancement MOS Field Effect Transistor. Uses advanced trench technology and design to pro

WNMD2160 WNMD2160 Dual N-Channel, 20V, 6.3A, Power MOSFET Http// www.willsemi.com VDS (V) Rds(on) ( ) 0.0157@ VGS=4.5V 0.018@ VGS=3.1V 20 0.020@ VGS=2.5V ESD Rating 2000V HBM SOT-23-6L Descriptions The WNMD2160 is N-Channel enhancement G1 D1/D2 G2 MOS Field Effect Transistor. Uses advanced trench 6 5 4 technology and design to provide excellent RDS (ON) with low gate cha