FQP10N60C - описание и поиск аналогов

April 2007 QFET FQP10N60C / FQPF10N60C 600V N-Channel MOSFET Features Description 9.5A, 600V, RDS(on) = 0.73 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especiall

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

February 2007 TM FRFET FQP10N60CF / FQPF10N60CF 600V N-Channel MOSFET Features Description 9A, 600V, RDS(on) = 0.8 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge ( typical 44 nC) DMOS technology. Low Crss ( typical 18 pF) This advanced technology has been especia

TIGER ELECTRONIC CO.,LTD Product specification 600V N-Channel MOSFET FQP10N60 DESCRIPTION These N-Channel enhancement mode power field effect transistors are produced using Fairchild s proprietary,planar, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in t

December 2006 TM FRFET FQP10N50CF / FQPF10N50CF 500V N-Channel MOSFET Features Description 10A, 500V, RDS(on) = 0.61 @VGS = 10 V These N-Channel enhancement mode power field effect transis- tors are produced using Fairchild s proprietary, planar stripe, Low gate charge (typical 43 nC) DMOS technology. Low Crss (typical 16pF) This advanced technology has been espe

April 2000 TM QFET QFET QFET QFET 200V N-ChanneI MOSFET GeneraI Description Features These N-Channel enhancement mode power field effect 10A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 13.5 nC) planar stripe, DMOS technology. Low Crss ( typical 13 pF) This advanced technology has been

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor

TM QFET FQP10N20C/FQPF10N20C 200V N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect 9.5A, 200V, RDS(on) = 0.36 @VGS = 10 V transistors are produced using Fairchild s proprietary, Low gate charge ( typical 20 nC) planar stripe, DMOS technology. Low Crss ( typical 40.5 pF) This advanced technology has been especially tailor

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

INCHANGE Semiconductor isc N-Channel MOSFET Transistor FQP10N20C FEATURES With TO-220 packaging High speed switching Very high commutation ruggedness Easy to use 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operationz APPLICATIONS PFC stages LCD & PDP TV Power supply Switching applications ABSOLUTE MAXIMU