SE2101E - Даташиты. Аналоги. Основные параметры

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE2101E P-Channel Enhancement-Mode MOSFET Revision:A General Description Features SE2101E is P-Channel enhancement mode power MOSFET which is produced with high VDS -20V, VGS 8V, ID -0.8A RDSon@-4.5V,

Jul 2015 SE2101 P-Channel Enhancement-Mode MOSFET Revision: A General Description Features This type is P-Channel enhancement mode For a single MOSFET power MOSFET which is produced with high VDS = -20V cell density and DMOS trench technology. This ID= -0.9A device particularly suits low voltage RDS(ON) = 280m @ VGS=-4.5V applications, especially for batter

KSE210Feature Low Collector-Emitter Saturation Voltage High Current Gain Bandwidth Product : fT=65MHz@IC= -100mA (Min.) Complement to KSE200TO-12611. Emitter 2.Collector 3.BasePNP Epitaxial Silicon TransistorAbsolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base Voltage - 40 V VCEO Collector-Emitter Voltage - 2

KSE210 PNP EPITAXIAL SILICON TRANSISTORCOLLECTOR-EMITTER SUSTAINING VOLTAGELOW COLLECTOR-EMITTER SATURATIONTO-126SATURATION VOLTAGEHIGH CURRENT GAIN-BANDWIDTHPRODUCT-MIN fT=65 I = -100CComplement to KSE200ABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector- Base Voltage VCBO -40 V Collector-Emitter Voltage VCEO -25 V Emitter- Base Voltage VEBO -8 V Co

SHANGHAI July 2009 MICROELECTRONICS CO., LTD. SE2102M Small Signal MOSFET 20 V, 600 mA, Single N-Channel MOSFET General Description Features The MOSFETs from SINO-IC provide the VDS (V) = 20V best combination of fast switching, low ID = 600mA on-resistance and cost-effectiveness. RDS(ON)