Справочник MOSFET. SE30P09D

 

SE30P09D MOSFET - описание производителя. Даташиты. Основные параметры и характеристики. Поиск аналога. Справочник


   Наименование прибора: SE30P09D
   Тип транзистора: MOSFET
   Полярность: P
   Pdⓘ - Максимальная рассеиваемая мощность: 2 W
   |Vds|ⓘ - Предельно допустимое напряжение сток-исток: 30 V
   |Vgs|ⓘ - Предельно допустимое напряжение затвор-исток: 20 V
   |Id|ⓘ - Максимально допустимый постоянный ток стока: 9 A
   Tjⓘ - Максимальная температура канала: 150 °C
   trⓘ - Время нарастания: 9.4 ns
   Cossⓘ - Выходная емкость: 370 pf
   Rdsⓘ - Сопротивление сток-исток открытого транзистора: 0.02 Ohm
   Тип корпуса: DFN3X3

 Аналог (замена) для SE30P09D

 

 

SE30P09D Datasheet (PDF)

 ..1. Size:440K  cn sino-ic
 se30p09d.pdf

SE30P09D SE30P09D

Nov 2014SE30P09DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R = 15m @ V =-10VDS(ON) GSusing as a load switch or in PWM applications. R = 21m @ V =-4.5VDS(ON) GS Simpl

 9.1. Size:442K  cn sino-ic
 se30p50.pdf

SE30P09D SE30P09D

Jun 2015SE30P50P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20ADS(ON) GS DFOM Simple Drive Requirement Small Package Outline Surface Mount Device

 9.2. Size:359K  cn sino-ic
 se30p12.pdf

SE30P09D SE30P09D

Nov 2014SE30P12P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple

 9.3. Size:361K  cn sino-ic
 se30p12d.pdf

SE30P09D SE30P09D

SE30P12DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple Drive Re

 9.4. Size:367K  cn sino-ic
 se30p50b.pdf

SE30P09D SE30P09D

Jun 2015SE30P50BP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =5.8m @V =-10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin conf

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