SE30P50B - аналоги, параметры транзистора - Справочник транзисторов

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Jun 2015 SE30P50B P-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = -30V DS Voltage and Current Improved Shoot-Through R =5.8m @V =-10 DS(ON) GS FOM Simple Drive Requirement Small Package Outline Surface Mount Device Pin conf

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Jun 2015 SE30P50 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Thigh Density Cell Design For Ultra Low For a single MOSFET On-Resistance Fully Characterized Avalanche V = -30V DS Voltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20A DS(ON) GS D FOM Simple Drive Requirement Small Package Outline Surface Mount Device

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Nov 2014 SE30P12 P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =11.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. R =18m @V =-4.5V DS(ON) GS Simple

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SE30P12D P-Channel Enhancement-Mode MOSFET Revision A General Description Features Advanced trench technology to provide For a single MOSFET excellent RDS(ON), low gate charge and low V = -30V DS operation voltage. This device is suitable for R =11.5m @V =-10V DS(ON) GS using as a load switch or in PWM applications. R =18m @V =-4.5V DS(ON) GS Simple Drive Re