SE30P50B - параметры транзистора MOSFET, его аналоги, datasheet

SE30P50B Datasheet (PDF)

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Jun 2015SE30P50BP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =5.8m @V =-10DS(ON) GSFOM Simple Drive Requirement Small Package Outline Surface Mount DevicePin conf

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Jun 2015SE30P50P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesThigh Density Cell Design For Ultra Low For a single MOSFETOn-Resistance Fully Characterized Avalanche V = -30VDSVoltage and Current Improved Shoot-Through R =4.4m @V =-10 @I =-20ADS(ON) GS DFOM Simple Drive Requirement Small Package Outline Surface Mount Device

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se30p12.pdf pdf_icon

Nov 2014SE30P12P-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple

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SE30P12DP-Channel Enhancement-Mode MOSFETRevision: AGeneral Description FeaturesAdvanced trench technology to provide For a single MOSFETexcellent RDS(ON), low gate charge and low V = -30VDSoperation voltage. This device is suitable for R =11.5m @V =-10VDS(ON) GSusing as a load switch or in PWM applications. R =18m @V =-4.5VDS(ON) GS Simple Drive Re