SHANGHAI Jan 2015 MICROELECTRONICS CO., LTD. SE3401B-2.8A,-20V P-Channel MOSFET Revision:A General Description Features ID =-2.8AThe MOSFETs from SINO-IC provide VDS (V) =-20V the best combination of fast switching, low RDS(ON)

FM120-MWILLASTHRUSE340 SOT-23 Plastic-Encapsulate MOSFETSFM1200-M1.0A SURFACE MOUNT SCHOTTKY BARRIER RECTIFIERS -20V- 200VSOD-123 PACKAGE Pb Free ProduPackage outlineFeatures Batch process design, excellent power dissipation offers better reverse leakage current and thermal resistance.SOD-123H Low profile surface mounted application in order to optimize bo

SE3401P-Channel Enhancement Mode Power MOSFET Product Summary V -30V DS I -4.4A D R ( at V =-10V) 55 mohm DS(ON) GS R ( at V =-4.5V) 68 mohm DS(ON) GS R ( at V =-2.5V) 96 mohm DS(ON) GSGeneral Description Trench Power LV MOSFET technology High density cell design for Low R DS(ON) High Speed switching Applications Batt

SHANGHAI July 2008 MICROELECTRONICS CO., LTD. SE3401 -4.2A,-30V P-Channel MOSFET Revision:B General Description Features The MOSFETs from SINO-IC provide VDS (V) =-30V the best combination of fast switching, low ID =-4.2A (VGS = -10V) on-resistance and cost-effectiveness. RDS(ON)